Silicon dioxide films have been deposited at temperatures less than 270 °C in an electron cyclotron resonance (ECR) plasma reactor from a gas phase combination of O2, SiH4 and He. The physical characterization of the material was carried out through pinhole density analysis as a function of substrate temperature for different μ-wave power (Ew). Higher Ew at room deposition temperature (RT) shows low defects densities (10 MV/cm are observed from ramps I–V. Moreover, from high …