-A A +A
Type: 
Journal
Description: 
Self-heating effects are investigated in polycrystalline silicon thin film transistors by combining experimental measurements and two-dimensional numerical simulations. From the thermodynamic model the temperature distribution was extracted and found rather uniform along the channel. This allowed the authors to introduce a simplified method to determine the channel temperature when the device is affected by self-heating effects.
Publisher: 
AIP
Publication date: 
28 Aug 2006
Authors: 

Antonio Valletta, Alessandro Moroni, Luigi Mariucci, Alessandra Bonfiglietti, Guglielmo Fortunato

Biblio References: 
Volume: 89 Issue: 9 Pages: 093509
Origin: 
Applied physics letters