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Type: 
Journal
Description: 
Field effect analysis has been employed in order to calculate the density of states of high quality pentacene thin-film transistors. The degradation of the electrical characteristics caused by the exposure to air has been studied and discussed in term of density of states modification. The calculated density of the states has been approximated by two exponential terms, as in amorphous silicon, and it has been used in a two-dimensional numerical simulation in order to reproduce the electrical characteristic variation with respect of the temperature and aging time.
Publisher: 
AIP
Publication date: 
8 May 2006
Authors: 

F De Angelis, S Cipolloni, L Mariucci, G Fortunato

Biblio References: 
Volume: 88 Issue: 19 Pages: 193508
Origin: 
Applied physics letters