The presence of high electric fields at the drain junction in polycrystalline silicon (polysilicon) thin film transistors (TFTs), enhances several undesired effects, such as hot-carrier related instabilities and kink effect. In order to reduce the drain electric field, non-self-aligned (NSA) device architecture can be adopted. In this case, dopant activation and active layer crystallization are achieved at the same time by excimer laser annealing, resulting in a substantial lateral dopant diffusion. The gradual doping profile provides not only a reduction of the drain electric field, but also a channel length shortening. Therefore, an effective channel length (L eff) has to be determined in such devices, in order to successfully design circuit applications. In this work, L eff and parasitic resistance (R p) modulation effects have been investigated in both n-and p-channel NSA polysilicon TFTs. Three different parameter extraction methods …