The expansion of the GaAsN lattice following hydrogen incorporation is spatially patterned so as to generate an anisotropic stress in the sample growth plane. The resulting in-plane symmetry breaking determines an in-plane polarization dependence of the light emitted along the crystal growth direction in agreement with optical selection rules and strain field calculations.
American Institute of Physics
29 Jun 2009
Volume: 94 Issue: 26 Pages: 261905
Applied Physics Letters