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Type: 
Journal
Description: 
The expansion of the GaAsN lattice following hydrogen incorporation is spatially patterned so as to generate an anisotropic stress in the sample growth plane. The resulting in-plane symmetry breaking determines an in-plane polarization dependence of the light emitted along the crystal growth direction in agreement with optical selection rules and strain field calculations.
Publisher: 
AIP
Publication date: 
29 Jun 2009
Authors: 

R Trotta, A Polimeni, M Capizzi, F Martelli, S Rubini, M Francardi, A Gerardino, L Mariucci

Biblio References: 
Volume: 94 Issue: 26 Pages: 261905
Origin: 
Applied Physics Letters