We report a study on AlGaN/GaN HEMT performances optimization by using Γ-Gate technology. The influence of the adopted technological parameters, like the field plate extension, through the analysis of small/large signal RF performances, including the comparison of the obtained results with conventional LG= 0.5 µm gate-length devices is investigated. The introduction of a field plate overhang of 0.2 µm over the underlying SiN layer at the drain side of the gate foot, has brought approximately to a factor two improvement on the device breakdown voltage. On the other hand, a reduction of RF gain has been observed in presence of the FP metallization, especially if longer than 0.2 µm, even though such negative effect is less significant if drain bias higher than 30V has been applied.
1 Jan 2007
Proceedings of 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)