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Type: 
Journal
Description: 
Self-heating-related instabilities have been investigated in p-channel polycrystalline-silicon thin-fllm transistor, showing an anomalous transconductance (gm) increase. The gm increase is a fingerprint of edge effects, resulting from a buildup of positive trapped charge in the gate oxide at the channel edges. This was confirmed by the annihilation of such positive charges obtained by sequential hot-carrier bias-stress experiments. From the analysis of the edge effects in devices with different channel lengths, we were able, using 2-D numerical simulations, to deter mine the size of the defected edge regions to be 400 nm.
Publisher: 
IEEE
Publication date: 
24 Oct 2011
Authors: 
Biblio References: 
Volume: 32 Issue: 12 Pages: 1707-1709
Origin: 
IEEE Electron Device Letters