We propose the implementation of graphene-based field effect transistor (FET) as radiation sensor. In the proposed detector, graphene obtained via chemical vapor deposition is integrated into a Si-based field effect device as the gate readout electrode, able to sense any change in the field distribution induced by ionization in the underneath absorber, because of the strong variation in the graphene conductivity close to the charge neutrality point. Different 2-dimensional layered materials can be envisaged in this kind of device.
11 Jul 2016
Volume: 824 Pages: 392-393
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment