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Type: 
Journal
Description: 
We present measurements of the Schottky barrier height on individual GaAs nanowires by means of x-ray photoelectron emission microscopy (XPEEM). Values of 0.73 and 0.51 eV, averaged over the entire wires, were measured on Cu-covered n-doped and p-doped GaAs nanowires, respectively, in agreement with results obtained on bulk material. Our measurements show that XPEEM can become a feasible and reliable investigation tool of interface formation at the nanoscale and pave the way towards the study of size-dependent effects on semiconductor-based structures.
Publisher: 
North-Holland
Publication date: 
15 Nov 2016
Authors: 

Lorenzo Di Mario, Stefano Turchini, Giovanni Zamborlini, Vitaly Feyer, Lin Tian, Claus M Schneider, Silvia Rubini, Faustino Martelli

Biblio References: 
Volume: 386 Pages: 72-77
Origin: 
Applied Surface Science