Contact effects in staggered SBTs with three different active layers (organic semiconductor (pentacene derivative), a-Si: H and IGZO) have been analyzed by using numerical simulations. In general, in staggered SBTs the presence of a Schottky barrier at the source severely limits the carrier injection, thus substantially reducing the on-current and, consequently, the on-off ratio, if compared to conventional TFT structures. On the other hand, depending upon barrier height and barrier lowering mechanisms, staggered SBTs can show interesting features, such as: 1) very low saturation voltage, resulting in much lower operating drain voltages and power dissipation; 2) increased output impedance, leading to larger voltage gain; 3) simpler fabrication, as doped regions are not necessary. Device characteristics of these devices are seriously influenced by contact effects, with the parasitic voltage drops at the contacts …