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In order to improve the stability of polysilicon thin-film transistors (TFTs) several drain junction architectures have been proposed. In this paper, the hot-carrier (HC) related stability of the lightly doped drain (LDD) TFT architecture is analyzed by using an iterative algorithm that relates the HC induced damage to the carrier injection across the device interfaces with gate and substrate oxide. The resulting creation of interface states and trapped charge is taken into account by using a system of rate equations that implements mathematically the Lais two step model, in which the generation of interface states is attributed to the trapping of hot-holes by centres into the oxide followed by the recombination with hot electrons. The rate equations are solved self-consistently with the aid of a device simulation program. By successive iterations, the time evolution of the interface state density and positive trapped charge distribution …
Publication date: 
19 Dec 2005
Biblio References: 
Volume: 53 Issue: 1 Pages: 43-50
IEEE transactions on electron devices