-A A +A
Type: 
Journal
Description: 
Au-catalyzed In x Ga 1- x As nanowires (NWs) and In x Ga 1- x As/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, and V/III elemental flux ratios on NW morphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electron microscopy and their optical properties by low-temperature photoluminescence.
Publisher: 
IEEE
Publication date: 
21 Oct 2010
Authors: 

Fauzia Jabeen, Vincenzo Grillo, Faustino Martelli, Silvia Rubini

Biblio References: 
Volume: 17 Issue: 4 Pages: 794-800
Origin: 
IEEE Journal of Selected Topics in Quantum Electronics