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Type: 
Journal
Description: 
We present a Raman scattering study of the anharmonic phonon decay of the , and E 1 (LO) phonons in InN nanowires over the 80–400 K temperature range. While the temperature-dependent anharmonic decay in the nanowires is similar to that found for bulk InN, the background contribution to the phonon lifetime is strongly reduced as a result of the improved crystalline quality. High-resolution measurements reveal a remarkably long lifetime of the mode. From the comparison between the frequencies measured in the nanowires with those of the thin film we obtain the deformation potentials for the mode.
Publisher: 
IOP Publishing
Publication date: 
1 Feb 2012
Authors: 

Núria Domènech-Amador, Ramón Cuscó, Lluís Artús, T Stoica, R Calarco

Biblio References: 
Volume: 23 Issue: 8 Pages: 085702
Origin: 
Nanotechnology