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Type: 
Journal
Description: 
We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.
Publisher: 
American Chemical Society
Publication date: 
11 May 2005
Authors: 

Raffaella Calarco, Michel Marso, Thomas Richter, Ali I Aykanat, Ralph Meijers, André vd Hart, Toma Stoica, Hans Lüth

Biblio References: 
Volume: 5 Issue: 5 Pages: 981-984
Origin: 
Nano letters