Type:
Journal
Description:
Nanowire growth: Catalyst‐free growth of GaN nanowires on Si substrates (see image) is investigated by high‐resolution transmission electron microscopy. Small GaN crystalline clusters are found on top of an interface amorphous layer. High‐crystalline‐quality vertical nanowires are grown on an amorphous oxide layer. These findings open new possibilities for nanowire growth on a variety of nonconventional substrates.
Publisher:
WILEY‐VCH Verlag
Publication date:
1 Jun 2008
Biblio References:
Volume: 4 Issue: 6 Pages: 751-754
Origin:
Small