-A A +A
Mg ion implantation into GaN has been performed. The crystal recovery in GaN during rapid thermal annealing (RTA) and excimer laser annealing (ELA) has been assessed. Damage annealing during RTA has been investigated as a function of the implant temperature (–150 °C (cold), 25 °C (RT) and 300 °C (hot)). It was found that the damage formed in samples implanted at elevated temperatures is more stable than the damage formed in samples implanted at cold temperatures and this has been explained by the formation of complex defects during implant. Damage annealing during ELA has been performed upon Mg implanted GaN at RT. It has been shown that the damage removal during ELA is enhanced when compared to RTA (at similar temperatures), and this technique may prove a viable alternative to conventional RTA processes for damage removal in ion implanted GaN. (© 2005 WILEY‐VCH Verlag …
Publication date: 
1 May 2005

Sean Whelan, Michael J Kelly, John Yan, Guglielmo Fortunato

Biblio References: 
Volume: 2 Issue: 7 Pages: 2472-2475
physica status solidi (c)