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An experimental and theoretical study of the effect of excimer laser annealing (ELA) on B redistribution and electrical activation in Ge is reported. We performed detailed structural, chemical, and electrical characterizations of Ge samples implanted with B (20 keV, 1 × 1015, or 1 × 1016 B/cm2) and processed by ELA (λ = 308 nm) with multiple pulses (1, 3, or 10). We also developed a diffusion model, in order to simulate the B redistribution induced by the ELA process. We found an anomalous impurity redistribution in the molten phase, which causes a dopant incorporation during the melt-growth at the maximum melt depth. The investigated samples showed a partial electrical activation of the B dopant. The inactivation of B in the samples implanted with 1 × 1015 B/cm2 was correlated to an oxygen contamination, while the poor electrical activation of B in the samples implanted with 1 × 1016 B/cm2 was …
American Institute of Physics
Publication date: 
21 Mar 2013

G Impellizzeri, E Napolitani, S Boninelli, G Fisicaro, M Cuscunà, R Milazzo, A La Magna, G Fortunato, F Priolo, V Privitera

Biblio References: 
Volume: 113 Issue: 11 Pages: 113505
Journal of Applied Physics