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In this work concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and re-growth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy super-saturation after the laser process The dependence on the pulse energy and number of shots of the residual damage, after a multi shot laser irradiation process, is characterised by means of these measurements. Kinetic Monte Carlo simulations of the molten Si re-crystallization show trapping of vacancies in the re-crystallized region. The main outcome of this simulation is the dependence of the vacancy's generation efficiency on under-cooling. The knowledge of this dependence allows us to implement a continuum model (based on kinetics equations for the phase, the free defect and clustered …
Publication date: 
2 Oct 2007

Antonino La Magna, V Privitera, G Mannino, Guglielmo Fortunato, Massimo Cuscuna, BG Svensson, E Monakhov, K Kuitunen, J Slotte, F Tuomisto

Biblio References: 
Pages: 245-250
2007 15th International Conference on Advanced Thermal Processing of Semiconductors