In this paper we report a TEM study on the ageing of GeTe nanowires, for scaled phase memory devices application, when exposed to normal atmospheric conditions. Selective oxidation of Ge occurs, leading to the formation of a Ge oxide amorphous shell around the wire, with GeTe4 nanocrystals embedded within. The oxidation process takes place in a few weeks after the sample preparation, seriously endangering the device integrity and correct functioning.
27 Sep 2016
Volume: 26 Issue: 2 Pages: 58-63