Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs | Rome UNIT

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Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Type:

Journal

Description:

Publisher:

IOP Publishing

Publication date:

9 Jun 2022

Authors:

Antonio Valletta, Fabrizio Roccaforte, Antonino La Magna, Guglielmo Fortunato, Patrick Fiorenza

Biblio References:

Origin:

Semiconductor Science and Technology

Link:

https://scholar.google.it/citations