2007 | Rome UNIT

Electrical Activation Of Fe Impurities Introduced In III‐V Semiconductors By High Temperature Ion Implantation

T Cesca, A Verna, G Mattei, A Gasparotto, B Fraboni, G Impellizzeri, F Priolo, L Tarricone, M Longo

2007-04-10

Biblio references: Volume: 893 Issue: 1 Pages: 241-242

Origin: AIP Conference Proceedings

In‐Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors

M Felici, A Polimeni, F Masia, R Trotta, G Pettinari, M Capizzi, G Salviati, L Lazzarini, N Armani, M Piccin, G Bais, F Martelli, S Rubini, A Franciosi, L Mariucci

2007-04-10

Biblio references: Volume: 893 Issue: 1 Pages: 31-32

Origin: AIP Conference Proceedings

Evidence of a New Hydrogen Complex in Dilute Nitride Alloys

G Bisognin, D De Salvador, E Napolitani, M Berti, A Polimeni, M Felici, M Capizzi, M Güngerich, PJ Klar, G Bais, F Jabeen, M Piccin, S Rubini, F Martelli, A Franciosi

2007-04-10

Biblio references: Volume: 893 Issue: 1 Pages: 155-156

Origin: AIP Conference Proceedings

Fabrication And Characterization Of Mn‐catalyzed GaAs Nanowires

F Martelli, S Rubini, M Piccin, G Bais, F Jabeen, S De Franceschi, V Grillo, M Lazzarino, E Carlino, N Mahne, L Businaro, F Romanato, A Franciosi

2007-04-10

Biblio references: Volume: 893 Issue: 1 Pages: 59-60

Origin: AIP Conference Proceedings

Photoluminescence under magnetic field and hydrostatic pressure in GaAs1− x N x for probing the compositional dependence of carrier effective mass and gyromagnetic ratio

Francesco Masia, G Pettinari, A Polimeni, M Felici, R Trotta, M Capizzi, T Niebling, H Günther, PJ Klar, W Stolz, A Lindsay, EP O’Reilly, M Piccin, G Bais, S Rubini, F Martelli, A Franciosi

2007-04-10

Biblio references: Volume: 893 Issue: 1 Pages: 157-158

Origin: AIP Conference Proceedings

Integration of melting excimer laser annealing in power MOS technology

Vittorio Privitera, Antonino La Magna, Corrado Spinella, Guglielmo Fortunato, Luigi Mariucci, M Cuscunà, Cateno Marco Camalleri, Angelo Magri, Giovanna La Rosa, Bengt G Svensson, Eduard V Monakhov, Frank Simon

2007-04-02

Biblio references: Volume: 54 Issue: 4 Pages: 852-860

Origin: IEEE transactions on electron devices

Local structure of Fe incorporated in GaInP layers by high temperature ion implantation

T Cesca, A Gasparotto, G Mattei, B Fraboni, F Boscherini, M Longo, L Tarricone

2007-04-01

Biblio references: Volume: 257 Issue: 1-2 Pages: 332-335

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

RBS-channeling analysis of ion-irradiation effects in heavily-doped Si: As

G Lulli, M Bianconi, M Ferri, G Fortunato, L Mariucci

2007-04-01

Biblio references: Volume: 257 Issue: 1-2 Pages: 253-256

Origin: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

GaAs nanowires by Mn-catalysed molecular beam epitaxy

S Rubini, M Piccin, G Bais, F Jabeen, F Martelli, Alfonso Franciosi

2007-04-01

Biblio references: Volume: 61 Issue: 1 Pages: 196

Origin: Journal of Physics: Conference Series

Integrated optics devices based on liquid crystals

Romeo Beccherelli, Bob Bellini, Domenico Donisi, Antonio d'Alessandro

2007-03-26

Biblio references: Volume: 465 Issue: 1 Pages: 249-257

Origin: Molecular Crystals and Liquid Crystals

Electrical Activation Of Fe Impurities Introduced In III‐V Semiconductors By High Temperature Ion Implantation

In‐Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors

Evidence of a New Hydrogen Complex in Dilute Nitride Alloys

Fabrication And Characterization Of Mn‐catalyzed GaAs Nanowires

Photoluminescence under magnetic field and hydrostatic pressure in GaAs1− x N x for probing the compositional dependence of carrier effective mass and gyromagnetic ratio

Integration of melting excimer laser annealing in power MOS technology

Local structure of Fe incorporated in GaInP layers by high temperature ion implantation

RBS-channeling analysis of ion-irradiation effects in heavily-doped Si: As

GaAs nanowires by Mn-catalysed molecular beam epitaxy

Integrated optics devices based on liquid crystals

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Units in Italy

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