2014 | Rome UNIT

Multiple state transport deduced by weak antilocalization and electron–electron interaction effects in Sbx Te1− x layers

Y Takagaki, U Jahn, A Giussani, R Calarco

2014-02-13

Biblio references: Volume: 26 Issue: 9 Pages: 095802

Origin: Journal of Physics: Condensed Matter

Investigation of the stability of ADE-FDTD methods for modified Lorentz media

Konstantinos P Prokopidis, Dimitrios C Zografopoulos

2014-02-13

Biblio references: Volume: 24 Issue: 10 Pages: 659-661

Origin: IEEE Microwave and Wireless Components Letters

N-type doping of Ge by As implantation and excimer laser annealing

R Milazzo, E Napolitani, G Impellizzeri, G Fisicaro, S Boninelli, M Cuscunà, D De Salvador, M Mastromatteo, M Italia, A La Magna, G Fortunato, F Priolo, V Privitera, A Carnera

2014-02-07

Biblio references: Volume: 115 Issue: 5 Pages: 053501

Origin: Journal of Applied Physics

Plasmon resonance optical tuning based on photosensitive composite structures

Giovanni Gilardi, Sanshui Xiao, N Asger Mortensen, Antonio d’Alessandro, Romeo Beccherelli

2014-02-01

Biblio references: Volume: 31 Issue: 2 Pages: 360-365

Origin: JOSA B

Homogenization processes and retrieval of equivalent constitutive parameters for multisurface-metamaterials

Enrica Martini, Giovanni Maria Sardi, Stefano Maci

2014-01-16

Biblio references: Volume: 62 Issue: 4 Pages: 2081-2092

Origin: IEEE Transactions on Antennas and Propagation

Silica nanowires decorated with metal nanoparticles for refractive index sensors: three-dimensional metal arrays and light trapping at plasmonic resonances

Annalisa Convertino, Massimo Cuscunà, Faustino Martelli, Maria Grazia Manera, Roberto Rella

2014-01-09

Biblio references: Volume: 118 Issue: 1 Pages: 685-690

Origin: The Journal of Physical Chemistry C

Analytical drain current model of both p-and n-channel OTFTs for circuit simulation

Fabrizio Torricelli, Matteo Ghittorelli, Matteo Rapisarda, Luigi Mariucci, Stephanie Jacob, Romain Coppard, Eugenio Cantatore, Zsolt Miklos Kovács-Vajna, Luigi Colalongo

2014-01-01

Biblio references:

Origin: Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama-Japan

Ultra-fast Processes in Optically Excited Ge_2Sb_2Te_5 by Transient X-ray Diffraction Using a Free-Electron Laser

Tetsuo Katayama, Ryo Terashima, Junji Tominaga, Muneaki Hase, Takahiro Sato, Kanade Ogawa, Makina Yabashi, R Calarco, Alessandro Giussani, Kirill V Mitrofanov, Kotaro Makino, Tadashi Togashi, Alexander V Kolobov, Paul Fons, Henning Riechert

2014-01-01

Biblio references:

Origin: JSAP-OSA Joint Symposia 2014 Abstracts

Tuning the growth mode of nanowires via the interaction among seeds, substrates and beam fluxes

Valentina Zannier, Vincenzo Grillo, Faustino Martelli, Jasper Rikkert Plaisier, Andrea Lausi, Silvia Rubini

2014-01-01

Biblio references: Volume: 6 Issue: 14 Pages: 8392-8399

Origin: Nanoscale

Role of oxygen on the electrical activation of B in Ge by excimer laser annealing

G Impellizzeri, E Napolitani, R Milazzo, S Boninelli, M Cuscunà, G Fisicaro, A La Magna, G Fortunato, F Priolo, V Privitera

2014-01-01

Biblio references: Volume: 211 Issue: 1 Pages: 122-125

Origin: physica status solidi (a)

Multiple state transport deduced by weak antilocalization and electron–electron interaction effects in Sbx Te1− x layers

Investigation of the stability of ADE-FDTD methods for modified Lorentz media

N-type doping of Ge by As implantation and excimer laser annealing

Plasmon resonance optical tuning based on photosensitive composite structures

Homogenization processes and retrieval of equivalent constitutive parameters for multisurface-metamaterials

Silica nanowires decorated with metal nanoparticles for refractive index sensors: three-dimensional metal arrays and light trapping at plasmonic resonances

Analytical drain current model of both p-and n-channel OTFTs for circuit simulation

Ultra-fast Processes in Optically Excited Ge_2Sb_2Te_5 by Transient X-ray Diffraction Using a Free-Electron Laser

Tuning the growth mode of nanowires via the interaction among seeds, substrates and beam fluxes

Role of oxygen on the electrical activation of B in Ge by excimer laser annealing

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