The activity of material synthesis at IMM Rome has two main objectives:

• The development of low-dimension structures by using high yield, low-cost and low-temperature growth techniques;
   
• The fabrication of inorganic and organic thin films for flexible and large area microelectronics.

The main following activities are:
 

PECVD and Electron Cyclotron Resonance(ECR)-PECVD systems: SiH₄, H₂, N₂O, NH₃, PH₃ B₂H₆, as process gases.

Scope: growth silicon (Si) based materials: Si nanowires (Si NWs), planar amorphous Si, planar silicon nitride (SiN) and silicon dioxide (SiO₂).

Balzers 510 evaporation system with electron beam and a thermal evaporation sources for the deposition of metals. Custom-made system for evaporation of organics.

Scope: evaporation of standard metal films for microelectronics (Au, Ag, Al, Cr, Ti, Pt, Ni, In etc.), Pentacene and nanowire decoration with metal nanoparticles (Au, and Ag).

VS-40 Sistec sputtering sytem equipped with three catode (actually Titanium, Alluminum and Cromium target mounted) able to perform RF and DC sputtering deposition.

Scope: Deposition of thin films of ZnO, ITO and metals.

Excimer laser light at 308 nm and pulse duration approx. 30 ns.

Scope: Fabrication of polycrystalline Si, polycrystalline Si/Ge alloys, dopant activation by excimer laser irradiation.