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Type: 
Journal
Description: 
Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.
Publisher: 
American Institute of Physics
Publication date: 
10 Sep 2012
Authors: 

Stefano Frabboni, Vincenzo Grillo, Gian Carlo Gazzadi, Roberto Balboni, Rinaldo Trotta, Antonio Polimeni, Mario Capizzi, Faustino Martelli, Silvia Rubini, Giulio Guzzinati, Frank Glas

Biblio References: 
Volume: 101 Issue: 11 Pages: 111912
Origin: 
Applied Physics Letters