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Type: 
Journal
Description: 
Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.
Publisher: 
AIP
Publication date: 
1 Sep 2012
Authors: 

S Frabboni, V Grillo, GC Gazzadi, R Balboni, R Trotta, A Polimeni, M Capizzi, F Martelli, S Rubini, G Guzzinati, F Glas

Biblio References: 
Volume: 101 Issue: 11 Pages: 111912-111912-4
Origin: 
Applied Physics Letters