We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E_1(\rmLO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward fre‐quency shift that can be explained by Martin's double resonance. The E_1(\rmLO)/E_2^h intensity ratio increases with the excitation wavelength more rapidly than the A_1(\rmLO)/E_2^h ratio measured in InN thin films.(© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)