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An accurate determination of the valence band discontinuity of the lattice matched GaAs/InGaP heterostructure is performed by admittance spectroscopy measurements in p+/MQW/n+ structures grown by metal-organic vapour phase epitaxy (MOVPE) using tertiarybutylarsine and tertiarybutylphosphine as alternative precursors for the V group elements. Through the analysis of the temperature dependence of the resonance frequency ϖ at which the isothermal curves of the conductance over frequency G (ω)/ω have the maximum, the energy separation of 336±5 meV between the lowest heavy hole quantum level in the GaAs wells and the InGaP valence band top is obtained. A valence band discontinuity of ΔE V= 346±5 meV is then derived by accounting for the calculated confinement energy of heavy holes (E 1 hh= 10 meV). Experimental values of ΔE V previously reported in the literature spread over the wide …
Publication date: 
15 Feb 2008

E Gombia, C Ghezzi, A Parisini, L Tarricone, M Longo

Biblio References: 
Volume: 147 Issue: 2-3 Pages: 171-174
Materials Science and Engineering: B