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We present two different methods to pattern the band gap of dilute nitrides in their growth plane by exploiting the unique capability of H to passivate N in these materials. By deposition of metallic masks on and subsequent H irradiation of GaAs 1-x N x, we artificially create zones of the crystal having the band gap of untreated GaAs 1-XNX well surrounded by GaAs-like barriers. Alternatively, by focusing an energetic e--beam on the surface of hydrogenated GaAs 1-x N x we displace H atoms from their N passivation sites, thus ...
Publication date: 
1 Jan 2007

M Felici, Antonio Polimeni, F Masia, R Trotta, G Pettinari, M Capizzi, G Salviati, L Lazzarini, N Armani, M Piccin, G Bais, F Martelli, S Rubini, A Franciosi, L Mariucci

Biblio References: 
28th International Conference on the Physics of Semiconductors, ICPS 2006