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We report a very simple, robust, and reliable on-chip fabrication method of a chemoresistive sensor based on silicon nanowires(NWs). Our method permits the use of nanowires without the need of their removal and transfer to a support different from the growth substrate. Our method, completely based on the silicon technology platform, exploits nanowires directly grown onto a selected area, over and between pre-patterned, interdigitated electrodes defined on oxidized silicon. The fabricated sensor is capable to detect NO 2 down to a few ppb levels operating at room temperature. The sensor characteristics benefit of the presence of self-welded nanowires.
American Institute of Physics, American Institute of Physics 1 Physics Ellipse, College Park, MD 20740, United States United States
Publication date: 
1 Jan 2012

Annalisa Convertino, Emiliano Zampetti, Antonella Macagnano, Alessandro Pecora, Guglielmo Fortunato, Laura Felisari, Giuseppe Nicotra, Corrado Spinella, Faustino Martelli

Biblio References: 
Volume: 101 Issue: 10
Applied Physics Letters