-A A +A
The valence band discontinuity of the lattice matched In 0.48 Ga 0.52 P∕ Ga As heterostructure was determined through a careful analysis of the temperature and frequency dependence of the admittance of p+∕ MQW∕ n+ structures, formed by a nominally undoped In Ga P∕ Ga As multiple quantum well region, interposed between p+ and n+ GaAs layers. The heterostructures were grown through metal organic vapor phase epitaxy by using tertiary butyl arsine and tertiary butyl phosphine as alternative precursors for the V-group elements. The growth conditions were optimized for obtaining sharp interfaces and negligible ordering effects in the cation sublattice. Accounting for the temperature dependence of the Fermi energy and the calculated confining energy (10 meV) of the heavy holes in the wells, a valence band offset Δ E V=(356±5) meV was derived from the temperature variation of the resonance …
American Physical Society
Publication date: 
14 Mar 2008

Carlo Ghezzi, Renato Magnanini, Antonella Parisini, Luciano Tarricone, Enos Gombia, Massimo Longo

Biblio References: 
Volume: 77 Issue: 12 Pages: 125317
Physical Review B