-A A +A
Type: 
Journal
Description: 
The influence of n-doping on the electrical transport properties of GaN nanowires is investigated by photoconductivity measurements on wires with different diameters. The electrical transport in nanowires is extremely sensitive to the wire diameter because of the size dependent barrier for surface recombination. This effect is used to determine the doping level of the nanowires and to complete and consolidate our previously developed surface recombination model for GaN nanowires.
Publisher: 
American Chemical Society
Publication date: 
8 Aug 2008
Authors: 

T Richter, H Lüth R Meijers, R Calarco, M Marso

Biblio References: 
Volume: 8 Issue: 9 Pages: 3056-3059
Origin: 
Nano letters