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Type: 
Journal
Description: 
We analysed the electrical characteristics and the stability of gate overlapped lightly doped drain (GOLDD) thin-film transistors (TFTs) with different channel length, n-region doping concentration and lateral doping profile at the junctions. A reduction of kink effect and an increase of device stability have been observed with the increase of the lateral doping profile. These results are explained by numerical simulation of electrical characteristics and hot carrier induced degradation. We found that different doping profiles produce, after bias stress, different interface state distributions across the channel/n-and n-/n+ junctions.
Publisher: 
IOP Publishing
Publication date: 
25 May 2006
Authors: 

A Bonfiglietti, A Valletta, M Rapisarda, L Mariucci, G Fortunato

Biblio References: 
Volume: 45 Issue: 5S Pages: 4384
Origin: 
Japanese journal of applied physics