In dilute nitrides [eg, Ga (AsN),(InGa)(AsN)] the formation of stable N-2H-H complexes following H irradiation removes the effects nitrogen has on the optical (ie, refractive index ), structural , and electronic  properties of the material. In particular, H binding to N atoms in GaAs< inf> 1-x N< inf> x leads to an increase in the band gap energy of the N-containing material (∼ 1.33 eV for x= 1% at T= 5 K) up to the value it has in GaAs (1.52 eV at 5 K). Therefore, by allowing H incorporation only in selected ...
12 Aug 2015
IEEE Computer Society