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Type: 
Journal
Description: 
We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy.
Publisher: 
American Institute of Physics
Publication date: 
11 Jul 2011
Authors: 

N Balakrishnan, A Patanè, O Makarovsky, A Polimeni, M Capizzi, F Martelli, S Rubini

Biblio References: 
Volume: 99 Issue: 2 Pages: 021105
Origin: 
Applied Physics Letters