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Type: 
Journal
Description: 
We present comparative studies of optical properties of GaN nanowires (NWs) obtained by two different self-formation techniques: Plasma-Assisted Molecular Beam Epitaxy (PAMBE) growth; and plasma etching of GaN layers deposited by Metal-Organic Vapor Phase Epitaxy
Publisher: 
Cambridge University Press
Publication date: 
1 Jan 2012
Authors: 

Toma Stoica, Anna Haab, David Griesche, Martin Mikulics, Friederich Limbach, Timo Schumann, Tobias Gotschke, Eli Sutter, Raffaella Calarco, Hilde Hardtdegen, Detlev Grützmacher

Biblio References: 
Volume: 1408
Origin: 
MRS Online Proceedings Library Archive