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GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures.
American Institute of Physics
Publication date: 
8 Sep 2008

L Felisari, V Grillo, F Martelli, R Trotta, A Polimeni, M Capizzi, F Jabeen, L Mariucci

Biblio References: 
Volume: 93 Issue: 10 Pages: 102116
Applied Physics Letters