In this work we propose the use of one single device (p-doped/intrinsic/n-doped amorphous silicon thin film diode) acting as both temperature and photo sensor. The two modalities are accomplished by applying two different bias conditions to the diode. In order to prove the correct device operation, we have analyzed the crosstalk effects of the temperature variation on light measurement and those of the light intensity variation on the accuracy in the temperature measurement. We found that the temperature variation ...
10 Aug 2015
Institute of Electrical and Electronics Engineers Inc.