-A A +A
Type: 
Patent
Description: 
A process for manufacturing a MOS device and the MOS device manufactured thereby are disclosed. The process includes in a semiconductor layer forming a gate structure above the semiconductor layer; forming a first doped region within a first surface portion of the semiconductor layer; and irradiating the first doped region with electromagnetic radiation, to carry out annealing thereof. Prior to the irradiating step, a dielectric mirror is formed above a second surface portion of the semiconductor layer. The dielectric mirror, which may be of …
Publisher: 
Publication date: 
4 Oct 2011
Authors: 

Dario Salinas, Guglielmo Fortunato, Angelo Magri, Luigi Mariucci, Massimo Cuscuna, Cateno Marco Camalleri

Biblio References: 
Origin: 
US8030192