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Type: 
Journal
Description: 
InGaAs/GaAs core-shell nanowires have been grown by molecular beam epitaxy. The core-shell nanowires show room temperature photoluminescence. At low temperatures their luminescence intensity is two to three orders of magnitudes larger than that of parent InGaAs nanowires grown without external GaAs shell. The nanowires have been structurally characterized by scanning electron microscopy and transmission electron microscopy.
Publisher: 
AIP
Publication date: 
25 Aug 2008
Authors: 

F Jabeen, S Rubini, V Grillo, L Felisari, F Martelli

Biblio References: 
Volume: 93 Issue: 8 Pages: 083117
Origin: 
Applied Physics Letters