Dilute nitrides alloys, as GaAsxN1−x, have been extensively studied in the last few years since the presence of small amounts of N in III–V semiconductors leads to major changes in the physical properties of the host materials. In particular, the strong reduction of band gap induced by N enables important technological applications in the field of active optical devices and microelectronics.
Springer, Berlin, Heidelberg
1 Jan 2008
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany