We report optimized photoluminescence of ZnSe nanowires grown by molecular beam epitaxy, obtained by lowering the growth temperature down to 300 °C. The low‐temperature growth method has been developed using Si(111) and GaAs(111)B substrates. On the latter, vertical oriented blue‐emitting nanowires have been obtained. The growth mecha‐ nism is discussed with the help of in‐situ and ex‐situ electronic and structural measurements. We also report strong blue luminescence from ZnSe nanowires grown on ITO‐coated glasses, demonstrating that ZnSe nanowires are optimal candidates for transparent optoelectronics. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)