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Type: 
Conference
Description: 
Phase Change Materials (PCMs) represent an important materials class from both a fundamental and technological point of view. Although much effort is still required to determine all the physical mechanisms underlying their complex physical properties, memory devices based on PCMs, which exploit the resistance contrast between the amorphous and crystalline phases, are already at the production stage. The ternary (GeTe) m (Sb2Te3) n alloys are the prototypical phase change materials commonly used for optical and memory devices in the composition Ge2Sb2Te5 (GST225). Among other fabrication methods, such as pulsed laser deposition and sputtering, which is the main technique used in industry, Molecular Beam Epitaxy (MBE) has recently gained in importance because of the advantage to obtain epitaxial quasi single-crystalline PCM layers. This achievement has made it possible the investigation of …
Publisher: 
Publication date: 
21 Nov 2020
Authors: 

Fabrizio Arciprete, Valeria Bragaglia, Stefano Cecchi, Eugenio Zallo, Ernesto Placidi, Daniele Dragoni, Marco Bernasconi, Jos Boschker, Raffaella Calarco

Biblio References: 
Origin: 
Materials Research Society (MRS) Spring Meeting