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In this paper, we present an ultraflexible tactile sensor, in a piezo-eletricoxide-semiconductor FET configuration, composed by a poly[vinylidenefluoride-co-trifluoroethylene] capacitor with an embedded readout circuitry, based on nMOS polysilicon electronics, integrated directly on polyimide. The ultraflexible device is designed according to an extended gate configuration. The sensor exhibits enhanced piezoelectric properties, thanks to the optimization of the poling procedure (with electric field up to 3 MV/cm), reaching a final piezoelectric coefficient d 33 of 47 pC/N. The device has been electromechanically tested by applying perpendicular forces with a minishaker. The tactile sensor, biased in a common-source arrangement, shows a linear response to increasing sinusoidal stimuli (up to 2 N) and increasing operating frequencies (up to 1200 Hz), obtaining a response up to 430 mV/N at 200 Hz for the sensor with …
Publication date: 
3 Feb 2015

Francesco Maita, Luca Maiolo, Antonio Minotti, Alessandro Pecora, Davide Ricci, Giorgio Metta, Graziella Scandurra, Gino Giusi, Carmine Ciofi, Guglielmo Fortunato

Biblio References: 
Volume: 15 Issue: 7 Pages: 3819-3826
IEEE Sensors Journal