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Massimo Longo received the Laurea degree in Physics in 1993. During his thesis work he acquired the know-how of the Metal Organic Vapour Phase Epitaxy process (MOVPE). In 1994 he had an INFM post-lauream grant, working on the “Study of MOVPE growth of II-VI semiconductor layers” (Lecce Research Unit). During 1994-97 he attended the PhD course in Physics. Research topic: growth optimization and study of the chemical-physical processes taking place during the MOVPE growth of II-VI/GaAs heterostructures. During 1998-99 he worked with an INFM Post-Doc fellowship at the Unit of Research in Lecce. Research topics: MOVPE growth of quantum confined epitaxial nanostructures, based on III-V compounds (GaAs, InGaAs and AlGaAs) for infra-red oparating devices and nitride compounds (GaN, AlGaN ed InGaN) for optoelectronic devices operating in the blue-UV. In 1999-2002 he had an INFM grant for the MOVPE growth of heterostrucures based on InP for micro- and optoelectronic applications; during such period he directed the installation of the MOVPE Laboratory of the University of Parma (Italy), operating since 2001. From 2002 to 2007 he was a researcher for INFM (subsequently CNR-INFM) at the Department of Physics of the University of Parma, being also responsible of the epitaxial growth activity. Main research topics: MOVPE growth of arsenide and phosphide compounds for high efficiency, multi quantum well solar cells, devoted to terrestrial applications and MOVPE growth of structures for the study of the effects of iron ion implantation for microelectronic applications. During 2002-2007 he also worked in teaching, orientation and organizing for the University of Parma. Since 2007 he is a researcher at the former National Laboratory MDM of Agrate Brianza (Milano), currently CNR-IMM, supervising the synthesis by Metalorganic Chemical vapour Deposition (MOCVD) and characterization of chalcogenides for nanoelectronics and thermoelectrics. After coordinating national and bilateral projects on materials and nanostructures for PCM, he has coordinated the European EU-FP7 Project SYNAPSE (http://cordis.europa.eu/project/rcn/106204_en.html). As for the joint activities of CNR-IMM with Micron ed STMicroelectronics, he has been acting since 2009 as the key-person for PCM memories, organizing the characterization of the involved materials through the analysis of the electrical transport (I-V, resisitvity), magnetic field (Hall effect) and thermal properties (3 Ω method). Since November 2018 he is key investigator within the EU H2020 FET PROACT project SKYTOP, in relation to the MOCVD Synthesis of topological insulator chalcogenide materials for spintronic applications Since January 2019 he is Workpackage leader for the materials development in the EU project H2020 ICT BeforeHand (2019-2021), devoted to the study of chalcogenide heterostructures for innovative phase change devices combining memory and computation capabilities.
Scientific Productions
arXiv preprint arXiv:2304.10841 [],
Close-to-Dirac point shift of large-area MOCVD-grown Bi2Te3’s Fermi level following growth on Sb2Te3
Bulletin of the American Physical Society [American Physical Society],
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide
Nanomaterials [MDPI], Volume: 12 Issue: 12 Pages: 2001
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires
Nanomaterials [MDPI], Volume: 12 Issue: 10 Pages: 1623
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
Nanomaterials [MDPI], Volume: 12 Issue: 8 Pages: 1340
Nanomaterials [MDPI], Volume: 12 Issue: 6 Pages: 1007
Synthesis, Properties and Applications of Germanium Chalcogenides [s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil-iations.], Pages: 135
Advanced Functional Materials [], Volume: 32 Issue: 4 Pages: 2109361
Advanced Materials Interfaces [], Volume: 8 Issue: 23 Pages: 2101244
Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3358
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 9 Pages: 5135-5144
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 7 Pages: 4023-4029
MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires
Coatings [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 718
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [], Volume: 535 Issue: 147729
Advanced Functional Materials [Wiley-VCH], Pages: 2109361
Phase-change memories: materials science, technological applications and perspectives
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 44 Pages: 440201
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing
Advanced Materials Interfaces [], Volume: 7 Issue: 19 Pages: 2000905
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 509 Pages: 166885
ALD growth of ultra-thin Co layers on the topological insulator Sb 2 Te 3
Nano Research [Tsinghua University Press], Volume: 13 Issue: 2 Pages: 570-575
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Epitaxial and large area Sb 2 Te 3 thin films on silicon by MOCVD
RSC Advances [Royal Society of Chemistry], Volume: 10 Issue: 34 Pages: 19936-19942
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth
Small [], Volume: 15 Issue: 37 Pages: 1901743
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 474 Pages: 632-636
In-doped Sb nanowires grown by MOCVD for high speed phase change memories
Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121
Materials Research Letters [Taylor & Francis], Volume: 6 Issue: 1 Pages: 29-35
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD
physica status solidi (RRL)–Rapid Research Letters [WILEY? VCH Verlag Berlin GmbH], Pages: 1800155
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-12
Thermal resistance measurement of In3SbTe2 nanowires
physica status solidi (a) [], Volume: 214 Issue: 5 Pages: 1600500
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 21 Pages: 213103
Novel near-infrared emission from crystal defects in MoS 2 multilayer flakes
Nature communications [Nature Publishing Group], Volume: 7 Pages: 13044
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330
Microscopie [], Volume: 26 Issue: 2 Pages: 58-63
Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550 °C
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 7 Pages: 544-548
Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals
Advanced Electronic Materials [], Volume: 2 Issue: 6 Pages: 1600091
2D Materials [IOP Publishing], Volume: 3 Issue: 2 Pages: 025024
Nanotechnology [IOP Publishing], Volume: 27 Issue: 17 Pages: 175703
MOCVD growth and structural characterization of In–Sb–Te nanowires
physica status solidi (a) [], Volume: 213 Issue: 2 Pages: 335-338
Non-volatile memories: Materials, nanostructures and integration approaches
physica status solidi (a) [], Volume: 2 Issue: 213 Pages: 235-236
A Novel Sb2Te3 Polymorph Stable at the Nanoscale
Chemistry of Materials [American Chemical Society], Volume: 27 Issue: 12 Pages: 4368-4373
Surface & Coatings Technology [Elsevier], Volume: 280 Pages: 37–42
Thermal conductivity measurement of a Sb2Te3 phase change nanowire
Applied Physics Letters [American Institute of Physics], Volume: 104 Issue: 26 Pages: 263103
Thermal properties of In–Sb–Te films and interfaces for phase change memory devices
Microelectronic engineering [Elsevier], Volume: 120 Pages: 3-8
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 7 Issue: 12 Pages: 1107-1111
Structural and electrical analysis of In–Sb–Te‐based PCM cells
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 7 Issue: 11 Pages: 1009-1013
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD
Journal of crystal growth [North-Holland], Volume: 370 Pages: 323-327
Thin solid films [Elsevier], Volume: 533 Pages: 66-69
Determination of the atomic stacking sequence of Ge-Sb-Te nanowires by HAADF STEM
MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 1512
Crystal structure assessment of Ge–Sb–Te phase change nanowires
Nanoscale [Royal Society of Chemistry], Volume: 5 Issue: 4 Pages: 1557-1563
Electronic properties of crystalline Ge1-xSbxTey thin films
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 102105
Thin solid films [Elsevier], Volume: 520 Issue: 21 Pages: 6619-6625
Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4 Nanowires
Nano letters [American Chemical Society], Volume: 12 Issue: 3 Pages: 1509-1515
Electrically detected magnetic resonance of donors and interfacial defects in silicon nanowires
Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 3 Issue: 4 Pages: 568-574
Au-catalyzed self assembly of GeTe nanowires by MOCVD
Journal of crystal growth [North-Holland], Volume: 315 Issue: 1 Pages: 152-156
Exploiting optical near fields for phase change memories
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 1 Pages: 013103
Ultraviolet optical near-fields of microspheres imprinted in phase change films
Applied physics letters [American Institute of Physics], Volume: 96 Issue: 19 Pages: 193108
Journal of Physics. Conference Series (Online) [], Volume: 214
Thermal characterization of the interface from room temperature up to
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 044314
Journal of crystal growth [North-Holland], Volume: 311 Issue: 18 Pages: 4293-4300
Chemical vapor deposition of chalcogenide materials for phase-change memories
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2338-2341
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 23 Pages: 5053-5057
Investigation of GaAs/InGaP superlattices for quantum well solar cells
Thin Solid Films [Elsevier], Volume: 516 Issue: 20 Pages: 6734-6738
Physical Review B [American Physical Society], Volume: 77 Issue: 12 Pages: 125317
Admittance spectroscopy of GaAs/InGaP MQW structures
Materials Science and Engineering: B [Elsevier], Volume: 147 Issue: 2-3 Pages: 171-174
Electrical and structural characterization of Fe implanted GaInP
Physica B: Condensed Matter [North-Holland], Volume: 401 Pages: 278-281
Deep levels controlling the electrical properties of Fe-implanted
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 18 Pages: 182106
AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 241-242
Local structure of Fe incorporated in GaInP layers by high temperature ion implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 332-335
Nonlinear electric field effects in the magnetoresistance of -type GaSb
Journal of applied physics [American Institute of Physics], Volume: 99 Issue: 12 Pages: 123709
Incorporation of active Fe impurities in GaInP by high temperature ion implantation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 242 Issue: 1-2 Pages: 653-655
Electrical and photoelectrical properties of a GaAs‐based p‐i‐n structure grown by MOVPE
Crystal Research and Technology: Journal of Experimental and Industrial Crystallography [WILEY‐VCH Verlag], Volume: 40 Issue: 10‐11 Pages: 1033-1038
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources
Crystal Research and Technology: Journal of Experimental and Industrial Crystallography [WILEY‐VCH Verlag], Volume: 40 Issue: 10‐11 Pages: 976-981
International Heat Transfer Conference Digital Library [Begel House Inc.],
MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires
2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154
Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 95 Pages: 113-119
High resistivity in GaInP/GaAs by high temperature Fe ion implantation
International Conference on Indium Phosphide and Related Materials, 2005 [IEEE], Pages: 653-656
Advances in Non-Volatile Memory and Storage Technology [Woodhead Publishing], Pages: 443-518
Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN
Microscopy of Semiconducting Materials 2001 [CRC Press], Pages: 251-254
Nanowire phase change memory (PCM) technologies: properties and performance
Advances in Non-Volatile Memory and Storage Technology [Woodhead Publishing], Pages: 231-261
Advances in Non-Volatile Memory and Storage Technology [Woodhead Publishing], Pages: 200-230
Photothermal Radiometry applied in nanoliter melted tellurium alloys
Materials Challenges and Testing for Supply of Energy and Resources [Springer, Berlin, Heidelberg], Pages: 273-283
GaAs/InGaP MQW’s for high efficiency solar cells
Prooc. of E-MRS 2007 Spring Meeting SEMICONDUCTOR ELECTRONICS PHOTONICS: SYMPOSIUM D [European Material Research Society], Pages: D-13-4-D-13-4
Structural and optical analysis of MOVPE-grown InGaP/GaAs superlattices
12th European Workshop on Metalorganic Vapour Phase Epitaxy EW-MOVPE XII, Bartislava June 3-6, 2007 [J. Novàk, IEE SAS, Bratislava], Pages: 239-242
Admittance spectroscopy of InGaP/GaAs MQW structures
Proceeding of E-MRS Spring Meerting Semiconductor Electronic & Photonics: Symposium B [European Material Research Society], Pages: 7.31-7.31
Structural and electrical characterization of Fe implanted GaInP
Proceedings of MRS Conference" Symposium F: Semiconductor Defect Engineering--Materials, Synthetic Structures, and Devices II" [USA],
High temperature Fe implantation of GaInP/GaAs: a PIXE and RBS channeling investigation.
Proccedings of the 17th International Conference on Ion Beam Analysis [ESP],