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Scientific Productions
(Invited) Dynamic Modeling of Photocurrents in Organic Thin-Film Transistors
Electrochemical Society Meeting Abstracts 245 [The Electrochemical Society, Inc.], Issue: 31 Pages: 1547-1547
Electrochemical Society Meeting Abstracts 245 [The Electrochemical Society, Inc.], Issue: 31 Pages: 1543-1543
Polyfluorinated Naphthalene-bis-hydrazimide for Solution-Grown n-Type Semiconducting Films
ACS omega [American Chemical Society], Volume: 8 Issue: 46 Pages: 43651-43663
Low Frequency Noise in DNTT/Cytop™ based Organic Thin Film Transistors
IEEE Electron Device Letters [IEEE],
Non-Quasi-Static modeling of printed OTFTs
IEEE Journal of the Electron Devices Society [IEEE],
Flexible Organic Phototransistors with Limit of Detection Down to 28 pW/cm2
IEEE Sensors Letters [IEEE],
Flexible fully organic indirect detector for megaelectronvolts proton beams
npj Flexible Electronics [Nature Publishing Group UK], Volume: 7 Issue: 1 Pages: 5
Advanced Electronic Materials [], Pages: 2201160
Materials Advances [Royal Society of Chemistry], Volume: 4 Issue: 19 Pages: 4590-4597
Highly sensitive organic phototransistor for flexible optical detector arrays
Organic Electronics [North-Holland], Volume: 102 Pages: 106452
Synthetic Metals [Elsevier], Volume: 283 Pages: 116985
Organic Electronics [North-Holland], Volume: 98 Pages: 106279
IEEE Transactions on Electron Devices [IEEE], Volume: 68 Issue: 8 Pages: 3740-3747
Electrochemical Society Meeting Abstracts 239 [The Electrochemical Society, Inc.], Issue: 32 Pages: 1063-1063
(Invited) Photo Induced Effects in OTFTs: Mechanisms and Applications
Electrochemical Society Meeting Abstracts 239 [The Electrochemical Society, Inc.], Issue: 32 Pages: 1056-1056
Gravure printed organic thin film transistors: Study on the ink printability improvement
Organic Electronics [North-Holland], Volume: 61 Pages: 104-112
Applied Surface Science [North-Holland], Volume: 448 Pages: 628-635
Staggered top-gate PDIF-CN 2 N-type thin film transistors on flexible plastic substrates
Organic Electronics [North-Holland], Volume: 57 Pages: 226-231
Organic Electronics [North-Holland], Volume: 41 Pages: 345-354
Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors
IEEE Electron Device Letters [IEEE], Volume: 37 Issue: 12 Pages: 1625-1627
Graphene-based field effect transistors for radiation-induced field sensing
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 824 Pages: 392-393
Growth and Manipulation of Organic Semiconductors Microcrystals by Wet Lithography
Advanced Functional Materials [], Volume: 26 Issue: 14 Pages: 2387-2393
Advanced Functional Materials [], Volume: 26 Issue: 14 Pages: 2221-2221
Growth and Manipulation of Organic Semiconductors Microcrystals by Wet Lithography
Advanced Functional Materials [], Volume: 26 Issue: 14 Pages: 2387-2393
A compact Spice model for organic TFTs and applications to logic circuit design
IEEE Transactions on Nanotechnology [IEEE], Volume: 15 Issue: 5 Pages: 754-761
Journal of Display Technology [IEEE], Volume: 12 Issue: 3 Pages: 252-257
Correlated mobility fluctuations and contact effects in p-Type organic thin-film transistors
IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 3 Pages: 1239-1245
Contact Effects in Organic Thin-Film Transistors: Device Physics and Modeling
Handbook of Visual Display Technology [Springer International Publishing], Pages: 945-969
Unified drain-current model of complementary p-and n-type OTFTs
Organic Electronics [North-Holland], Volume: 22 Pages: 5-11
Evidence of correlated mobility fluctuations in p-type organic thin-film transistors
IEEE Electron Device Letters [IEEE], Volume: 36 Issue: 4 Pages: 390-392
Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors
IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 12 Pages: 4120-4127
Contact effects in amorphous InGaZnO thin film transistors
Journal of Display Technology [IEEE], Volume: 10 Issue: 11 Pages: 956-961
Contact Effects in Organic Thin Film Transistors with Different Device Structures
ECS Transactions [IOP Publishing], Volume: 64 Issue: 10 Pages: 131
(Invited) Contact effects in organic thin film transistors with different device structures
ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 10 Pages: 131-142
Variation-based design of an AM demodulator in a printed complementary organic technology
Organic Electronics [North-Holland], Volume: 15 Issue: 4 Pages: 904-912
Analytical drain current model of both p-and n-channel OTFTs for circuit simulation
Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama-Japan [],
Journal of display technology [IEEE], Volume: 9 Issue: 9 Pages: 764-769
Principle of operation and modeling of source-gated transistors
Journal of Applied Physics [AIP Publishing], Volume: 114 Issue: 6
Contact effects in organic and inorganic thin film transistors
ECS Transactions [IOP Publishing], Volume: 54 Issue: 1 Pages: 171
(Invited) Contact Effects in Organic and Inorganic Thin Film Transistors
ECS Transactions [The Electrochemical Society], Volume: 54 Issue: 1 Pages: 171-185
(Invited) Printed Organic TFTs on Flexible Substrate for Complementary Circuits
ECS Transactions [The Electrochemical Society], Volume: 54 Issue: 1 Pages: 153-163
Printed organic TFTs on flexible substrate for complementary circuits
ECS Transactions [IOP Publishing], Volume: 54 Issue: 1 Pages: 153
Solid-State Electronics [Pergamon], Volume: 84 Pages: 167-178
Organic Electronics [North-Holland], Volume: 14 Issue: 1 Pages: 86-93
FILM TRANSISTORS WITH VERY THIN PECVD a-SiO2 GATE
Crucial Issues in Semiconductor Materials and Processing Technologies [Springer Science & Business Media], Volume: 222 Pages: 27
Applied Physics Letters [AIP Publishing], Volume: 101 Issue: 23
Analysis of contact effects in fully printed p-channel organic thin film transistors
Organic Electronics [North-Holland], Volume: 13 Issue: 10 Pages: 2017-2027
High performance printed N and P-type OTFTs for CMOS applications on plastic substrate
Proceedings of IEEE ESSDERC [], Pages: 173-176
Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor
Procedia Engineering [No longer published by Elsevier], Volume: 47 Pages: 526-529
Journal of display Technology [IEEE], Volume: 8 Issue: 1 Pages: 18-22
Contact effects in high performance fully printed p-channel organic thin film transistors
Applied Physics Letters [AIP Publishing], Volume: 99 Issue: 23
IEEE electron device letters [IEEE], Volume: 32 Issue: 12 Pages: 1707-1709
Physical Review B [American Physical Society], Volume: 84 Issue: 8 Pages: 085331
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 5 Pages: 053503
(Invited) Short Channel Effects and Drain Field Relief Architectures in Polysilicon TFTs
ECS Transactions [The Electrochemical Society], Volume: 37 Issue: 1 Pages: 3-14
Short channel effects and drain field relief architectures in polysilicon TFTs
ECS Transactions [IOP Publishing], Volume: 37 Issue: 1 Pages: 3
Carbon nanotube semitransparent electrodes for amorphous silicon based photovoltaic devices
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 18 Pages: 183113
Influence of structural properties on environmental stability of pentacene thin film transistors
Organic Electronics [North-Holland], Volume: 12 Issue: 3 Pages: 447-452
Pentacene thin film transistors with (polytetrafluoroethylene) PTFE-like encapsulation layer
Organic Electronics [North-Holland], Volume: 12 Issue: 1 Pages: 119-124
(Invited) downscaling issues in polycrystalline silicon TFTs
ECS Transactions [The Electrochemical Society], Volume: 33 Issue: 5 Pages: 3-22
IEEE Electron Device Letters [IEEE], Volume: 31 Issue: 8 Pages: 830-832
Physical Review B [American Physical Society], Volume: 81 Issue: 23 Pages: 235327
Low-temperature, self-catalyzed growth of Si nanowires
Nanotechnology [IOP Publishing], Volume: 21 Issue: 25 Pages: 255601
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 7 Pages: 074505
Negative bias–temperature stress in non-self-aligned p-channel polysilicon TFTs
Thin solid films [Elsevier], Volume: 517 Issue: 23 Pages: 6379-6382
Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6353-6357
Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6371-6374
Pentacene TFTs with parylene passivation layer
Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6283-6286
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 3 Pages: 033507
Light polarization control in strain-engineered GaAsN/GaAsN: H heterostructures
Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 26 Pages: 261905
Self-heating effects in p-channel polysilicon TFTs fabricated on different substrates
Journal of the Korean Physical Society [The Korean Physical Society], Volume: 54 Issue: 1 Pages: 455-462
Flexible electronics based on polysilicon thin film transistor
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 258-261
Water-Related Instabilities in Pentacene Thin-Film Transistors
Journal of the Korean Physical Society [Korean Physical Society], Volume: 54 Issue: 1 Pages: 505-509
“Hump” characteristics and edge effects in polysilicon thin film transistors
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 12 Pages: 124511
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 19 Pages: 193512
Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 10 Pages: 102116
Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 10 Pages: H764
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures
Applied Physics Letters [AIP], Volume: 92 Issue: 22 Pages: 221901-221901-3
Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 412-416
Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic
Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 348-352
Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 406-411
Drain induced barrier lowering and impact ionization effects in short channel polysilicon TFTs
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 907-910
Drain induced barrier lowering and impact ionization effects in short channel polysilicon TFTs
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 907-910
ECS Transactions [IOP Publishing], Volume: 8 Issue: 1 Pages: 211
Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors
thin solid films [Elsevier], Volume: 515 Issue: 19 Pages: 7417-7421
Insight into excimer laser crystallization exploiting ellipsometry: Effect of silicon film precursor
Thin solid films [Elsevier], Volume: 515 Issue: 19 Pages: 7508-7512
Electrical stability in self-aligned p-channel polysilicon thin film transistors
Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7571-7575
Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression
Thin solid films [Elsevier], Volume: 515 Issue: 19 Pages: 7433-7436
Aging effects and electrical stability in pentacene thin film transistors
Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7546-7550
Proceedings of 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) [], Pages: 371-378
Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices
Journal of applied physics [AIP Publishing], Volume: 101 Issue: 9
In‐Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors
AIP Conference Proceedings [American Institute of Physics], Volume: 893 Issue: 1 Pages: 31-32
Integration of melting excimer laser annealing in power MOS technology
IEEE transactions on electron devices [IEEE], Volume: 54 Issue: 4 Pages: 852-860
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si: As
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 253-256
Japanese journal of applied physics [IOP Publishing], Volume: 46 Issue: 3S Pages: 1299
Polysilicon Thin Film Transistors on spin-coated Polyimide layer for flexible electronics
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 261-264
Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes [Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-], Volume: 46 Issue: 3 Pages: 1299-1302
Electrical instabilities in p-channel polysilicon TFTs: role of hot carrier and self-heating effects
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 1065-1070
Polysilicon Thin Film Transistors on spin-coated Polyimide layer for flexible electronics
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 261-264
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 994
Electrical instabilities in p-channel polysilicon TFTs: role of hot carrier and self-heating effects
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 1065-1070
Bragg reflector based gate stack architecture for process integration of excimer laser annealing
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 25 Pages: 253502
Ultra-shallow junction by laser annealing: Integration issues and modelling
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 1-8
Hot-carrier effects in p-channel polycrystalline silicon thin film transistors
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 18 Pages: 183518
Improved electrical stability in asymmetric fingered polysilicon thin film transistors
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 12 Pages: 123506
Self-heating effects in polycrystalline silicon thin film transistors
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 9 Pages: 093509
Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9-20 Pages: 1723-1727
Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9-20 Pages: 1765-1768
Japanese journal of applied physics [IOP Publishing], Volume: 45 Issue: 5S Pages: 4384
Modelling velocity saturation effects in polysilicon thin-film transistors
Japanese journal of applied physics [IOP Publishing], Volume: 45 Issue: 5S Pages: 4374
Excimer Laser annealing for shallow junction formation in Si power MOS devices
Thin solid films [Elsevier], Volume: 504 Issue: 1-2 Pages: 2-6
Aging effects in pentacene thin-film transistors: Analysis of the density of states modification
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 19 Pages: 193508
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 13 Pages: 132106
Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs
IEEE transactions on electron devices [IEEE], Volume: 53 Issue: 3 Pages: 573-577
Perspectives and advantages of the use of excimer laser annealing for MOS technology
Il nuovo cimento C [Societa italiana di fisica], Volume: 29 Issue: 3 Pages: 369-379
Analysis of transport properties of SLS polysilicon TFTs
한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 513-518
International Journal of RF and Microwave Computer‐Aided Engineering: Co‐sponsored by the Center for Advanced Manufacturing and Packaging of Microwave, Optical, and Digital Electronics (CAMPmode) at the University of Colorado at Boulder [Wiley Subscription Services, Inc., A Wiley Company], Volume: 16 Issue: 1 Pages: 70-80
Journal of the Korean Physical Society [], Volume: 48 Issue: 91 Pages: S64-S71
Analysis of transport properties of SLS polysilicon TFTs
한국정보디스플레이학회 International Meeting [], Pages: 513-518
Hot-carrier-induced degradation of LDD polysilicon TFTs
IEEE Transactions on Electron Devices [IEEE], Volume: 53 Issue: 1 Pages: 43-50
Hot-carrier-induced degradation of LDD polysilicon TFTs
IEEE transactions on electron devices [IEEE], Volume: 53 Issue: 1 Pages: 43-50
Boron distribution in silicon after excimer laser annealing with multiple pulses
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 228-231
Excimer laser annealing of B and BF 2 implanted Si
Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 232-234
The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 19 Pages: 192109
Improved electrical stability in asymmetric fingered polysilicon thin film transistors
Thin solid films [Elsevier], Volume: 487 Issue: 1-2 Pages: 237-241
Short channel effects in polysilicon thin film transistors
Thin Solid Films [Elsevier], Volume: 487 Issue: 1-2 Pages: 221-226
Stable p-channel polysilicon thin film transistors fabricated by laser doping technique
Thin solid films [Elsevier], Volume: 487 Issue: 1-2 Pages: 232-236
Channel doping effects in poly-Si thin film transistors
Thin solid films [Elsevier], Volume: 487 Issue: 1-2 Pages: 242-246
Boron distribution in silicon after multiple pulse excimer laser annealing
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 8 Pages: 081901
Electrical characterization of directionally solidified polycrystalline silicon
Journal of applied physics [American Institute of Physics], Volume: 98 Issue: 3 Pages: 033702
High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 20 Pages: 203505
Dopant and defect interactions in polycrystalline silicon thin-film transistors
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 10 Pages: 104515
Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing
Microelectronics Reliability [Pergamon], Volume: 45 Issue: 5-6 Pages: 879-882
Enhanced boron diffusion in excimer laser preannealed Si
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 15 Pages: 151902
Depth distribution of B implanted in Si after excimer laser irradiation
Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 5 Pages: 051909
Fully-organic indirect flexible detector for real-time dose monitoring during proton therapy
2023 IEEE Nuclear Science Symposium, Medical Imaging Conference and International Symposium on Room-Temperature Semiconductor Detectors (NSS MIC RTSD) [IEEE], Pages: 1-2
Effect of Drain Top Metal Overlap on the Current in Bottom-gate Thin Film Transistors
2019 Latin American Electron Devices Conference (LAEDC) [IEEE], Volume: 1 Pages: 1-4
A large signal non quasi static model of printed organic TFTs and simulation of CMOS circuits
2017 European Conference on Circuit Theory and Design (ECCTD) [IEEE], Pages: 1-4
Logic gates and memory elements design and simulation using PMOS organic transistor
2017 IEEE 26th International Symposium on Industrial Electronics (ISIE) [IEEE], Pages: 2097-2101
A large signal non quasi static compact model for printed organic thin film transistors
2016 46th European Solid-State Device Research Conference (Essderc) [IEEE], Pages: 460-463
Water stable organic thin film transistors (TFTs) made on flexible substrates
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO) [IEEE], Pages: 1430-1433
Fully-organic flexible tactile sensor for advanced robotic applications
2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 45-48
Analytical drain‐current model of p‐and n‐channel OTFTs for circuit simulation
Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014 [],
Design of analog and digital building blocks in a fully printed complementary organic technology
2012 Proceedings of the ESSCIRC (ESSCIRC) [IEEE], Pages: 145-148
High performance printed N and P-type OTFTs for complementary circuits on plastic substrate
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) [IEEE], Pages: 173-176
conference; ICOE2012; 2012-06-25; 2012-06-27 [], Pages: P2. 15-1/2
Downscaling Issues in Polycrystalline Silicon TFTs
218th ECS Meeting [The Electrochemical Society], Issue: 29 Pages: 1786-1786
Chemoresistive nanofibrous sensor array and read-out electronics on flexible substrate
TRANSDUCERS 2009-2009 International Solid-State Sensors, Actuators and Microsystems Conference [IEEE], Pages: 144-147
Interdigitated sensorial system on flexible substrate
SENSORS, 2008 IEEE [IEEE], Pages: 21-24
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 301-305
Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation
2007 15th International Conference on Advanced Thermal Processing of Semiconductors [IEEE], Pages: 31-35
28th International Conference on the Physics of Semiconductors, ICPS 2006 [],
Sub-micron gate length MESFET on Hydrogen Terminated Polycrystalline diamond
International symposium on microwave and optical technologies (ISMOT 2007) [IT], Pages: 185-188
Comportamento in DC ea radiofrequenza di MESFET a canale superficiale in diamante polycrystallino
IV Simposio sulle Tecnologie Avanzate [],
Very High Power Field-Plate GaAs PHEMT technology for C and X-band applications
31th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2007) [],
Sub-micron gate length MESFET on Hydrogen Terminated Polycrystalline diamond
International symposium on microwave and optical technologies (ISMOT 2007) [IT], Pages: 185-188
Very High Performance GaN HEMT devices by optimized buffer and field plate technology
2006 European Microwave Integrated Circuits Conference [IEEE], Pages: 61-64
Dispositivi GaN HEMT: Stato dell’arte e roadmap del progetto KORRIGAN
III Simposio sulle tecnologie avanzate, utilizzo e applicazioni [IT],
Field plate approach to AlGaN/GaN HEMTs for high voltage operation
Target Days 2006 [IT],
Historical evolution of pulsed laser annealing for semiconductor processing
Laser Annealing Processes in Semiconductor Technology [Woodhead Publishing], Pages: 1-48
Proc. of International Conference on Organic Electronics (ICOE) [],
Physically-based compact model of staggered p-and n-type organic thin-film transistors
International Thin-Film Transistor Conference (ITC) [], Pages: 116-116
Secondary Electrons Characterization of Hydrogenated Dilute Nitrides
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany [Springer, Berlin, Heidelberg], Pages: 541-542