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Surname: 
Mariucci
Firstname: 
Luigi
Position: 
Staff
Profile: 
Senior Researcher
Phone: 
+39 06 4993 4706

Scientific Productions

A Valletta, M Rapisarda, S Calvi, G Fortunato, M Frasca, G Maira, A Ciccazzo, L Mariucci

A DC and small signal AC model for organic thin film transistors including contact effects and non quasi static regime

Organic Electronics [North-Holland], Volume: 41 Pages: 345-354

Gino Giusi, Graziella Scandurra, Sabrina Calvi, Guglielmo Fortunato, Matteo Rapisarda, Luigi Mariucci, Carmine Ciofi

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors

IEEE Electron Device Letters [IEEE], Volume: 37 Issue: 12 Pages: 1625-1627

Antonio Valletta, Ahmet S Demirkol, Giovanni Maira, Mattia Frasca, Vincenzo Vinciguerra, Luigi G Occhipinti, Luigi Fortuna, Luigi Mariucci, Guglielmo Fortunato

A compact Spice model for organic TFTs and applications to logic circuit design

IEEE Transactions on Nanotechnology [IEEE], Volume: 15 Issue: 5 Pages: 754-761

Alessandra Di Gaspare, Antonio Valletta, Guglielmo Fortunato, Rosanna Larciprete, Luigi Mariucci, Andrea Notargiacomo, Roberto Cimino

Graphene-based field effect transistors for radiation-induced field sensing

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment [North-Holland], Volume: 824 Pages: 392-393

Denis Gentili, Fabiola Liscio, Luigi Mariucci, Luca Beverina, Manuela Melucci, Stefano Toffanin, Silvia Milita, Massimiliano Cavallini

Growth and Manipulation of Organic Semiconductors Microcrystals by Wet Lithography

Advanced Functional Materials [], Volume: 26 Issue: 14 Pages: 2387-2393

Denis Gentili, Fabiola Liscio, Luigi Mariucci, Luca Beverina, Manuela Melucci, Stefano Toffanin, Silvia Milita, Massimiliano Cavallini

Crystal Manipulation: Growth and Manipulation of Organic Semiconductors Microcrystals by Wet Lithography (Adv. Funct. Mater. 14/2016)

Advanced Functional Materials [], Volume: 26 Issue: 14 Pages: 2221-2221

G Giusi, O Giordano, G Scandurra, S Calvi, G Fortunato, M Rapisarda, L Mariucci, C Ciofi

Correlated mobility fluctuations and contact effects in p-Type organic thin-film transistors

IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 3 Pages: 1239-1245

Matteo Rapisarda, Sabrina Calvi, Antonio Valletta, Guglielmo Fortunato, Luigi Mariucci

The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs

Journal of Display Technology [IEEE], Volume: 12 Issue: 3 Pages: 252-257

Fabrizio Torricelli, Matteo Ghittorelli, Matteo Rapisarda, Antonio Valletta, Luigi Mariucci, Stephanie Jacob, Romain Coppard, Eugenio Cantatore, Zsolt Miklós Kovács-Vajna, Luigi Colalongo

Unified drain-current model of complementary p-and n-type OTFTs

Organic Electronics [North-Holland], Volume: 22 Pages: 5-11

Gino Giusi, Orazio Giordano, Graziella Scandurra, Sabrina Calvi, Guglielmo Fortunato, Matteo Rapisarda, Luigi Mariucci, Carmine Ciofi

Evidence of correlated mobility fluctuations in p-type organic thin-film transistors

IEEE Electron Device Letters [IEEE], Volume: 36 Issue: 4 Pages: 390-392

Antonio Valletta, Matteo Rapisarda, Sabrina Calvi, Guglielmo Fortunato, Stephanie Jacob, Vincent Fischer, Mohammed Benwadih, Jacqueline Bablet, Isabelle Chartier, Romain Coppard, Luigi Mariucci

Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors

IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 12 Pages: 4120-4127

A Valletta, G Fortunato, L Mariucci, P Barquinha, R Martins, E Fortunato

Contact effects in amorphous InGaZnO thin film transistors

Journal of Display Technology [IEEE], Volume: 10 Issue: 11 Pages: 956-961

Luigi Mariucci, Matteo Rapisarda, Antonio Valletta, Sabrina Calvi, Mohammed Benwadih, Romain Coppard, Guglielmo Fortunato

Contact Effects in Organic Thin Film Transistors with Different Device Structures

Meeting Abstracts [The Electrochemical Society], Issue: 47 Pages: 1910-1910

Luigi Mariucci, Matteo Rapisarda, Antonio Valletta, Sabrina Calvi, Mohammed Benwadih, Romain Coppard, Guglielmo Fortunato

(Invited) Contact effects in organic thin film transistors with different device structures

ECS Transactions [The Electrochemical Society], Volume: 64 Issue: 10 Pages: 131-142

S Abdinia, F Torricelli, G Maiellaro, R Coppard, A Daami, S Jacob, L Mariucci, G Palmisano, E Ragonese, F Tramontana, AHM Van Roermund, E Cantatore

Variation-based design of an AM demodulator in a printed complementary organic technology

Organic Electronics [North-Holland], Volume: 15 Issue: 4 Pages: 904-912

A Valletta, L Mariucci, A Pecora, L Maiolo, SD Brotherton, G Fortunato

Analysis of kink effect and short channel effects in fully self-aligned gate overlapped lightly doped drain polysilicon TFTs

Journal of Display Technology [IEEE], Volume: 9 Issue: 9 Pages: 764-769

A Valletta, L Mariucci, M Rapisarda, G Fortunato

Principle of operation and modeling of source-gated transistors

Journal of Applied Physics [AIP], Volume: 114 Issue: 6 Pages: 064501

S Jacob, S Abdinia, M Benwadih, J Bablet, I Chartier, R Gwoziecki, E Cantatore, AHM Van Roermund, L Maddiona, F Tramontana, G Maiellaro, L Mariucci, M Rapisarda, G Palmisano, R Coppard

High performance printed N and P-type OTFTs enabling digital and analog complementary circuits on flexible plastic substrate

Solid-State Electronics [Pergamon], Volume: 84 Pages: 167-178

Romain Coppard, Stephanie Jacob, Micael Charbonneau, Mohammed Benwadih, Jacqueline Bablet, Vincent Fischer, Romain Gwoziecky, Isabelle Chartier, Sahel Abdinia, Eugenio Cantatore, L Maddiona, G Maiellaro, Luigi Mariucci, Matteo Rapisarda, F Tramontana

(Invited) Printed Organic TFTs on Flexible Substrate for Complementary Circuits

ECS Transactions [The Electrochemical Society], Volume: 54 Issue: 1 Pages: 153-163

Guglielmo Fortunato, Matteo Rapisarda, Antonio Valletta, Luigi Mariucci

(Invited) Contact Effects in Organic and Inorganic Thin Film Transistors

ECS Transactions [The Electrochemical Society], Volume: 54 Issue: 1 Pages: 171-185

L Mariucci, M Rapisarda, A Valletta, S Jacob, M Benwadih, G Fortunato

Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source–drain contacts

Organic Electronics [North-Holland], Volume: 14 Issue: 1 Pages: 86-93

P Foglietti, G Fortunato, L Mariucci, C Reita

FILM TRANSISTORS WITH VERY THIN PECVD a-SiO2 GATE

Crucial Issues in Semiconductor Materials and Processing Technologies [Springer Science & Business Media], Volume: 222 Pages: 27

M Rapisarda, G Fortunato, A Valletta, S Jacob, M Benwadih, R Coppard, I Chartier, L Mariucci

Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

Applied Physics Letters [AIP], Volume: 101 Issue: 23 Pages: 233304

M Rapisarda, A Valletta, A Daami, S Jacob, M Benwadih, R Coppard, G Fortunato, L Mariucci

Analysis of contact effects in fully printed p-channel organic thin film transistors

Organic Electronics [North-Holland], Volume: 13 Issue: 10 Pages: 2017-2027

Antonio Valletta, Luca Maiolo, Luigi Mariucci, Alessandro Pecora, Matteo Rapisarda, Guglielmo Fortunato, Stan D Brotherton

Reduction of short channel effects and hot carrier induced instability in fully self-aligned gate overlapped lightly doped drain polysilicon TFTs

Journal of display Technology [IEEE], Volume: 8 Issue: 1 Pages: 18-22

L Maiolo, F Maita, A Pecora, M Rapisarda, L Mariucci, M Benwadih, S Jacob, I Chartier, R Coppard

Flexible PVDF-TrFE pyroelectric sensor integrated on a fully printed p-channel organic transistor

Procedia Engineering [Elsevier], Volume: 47 Pages: 526-529

A Valletta, A Daami, M Benwadih, R Coppard, G Fortunato, M Rapisarda, F Torricelli, L Mariucci

Contact effects in high performance fully printed p-channel organic thin film transistors

Applied Physics Letters [AIP], Volume: 99 Issue: 23 Pages: 271

L Mariucci, P Gaucci, A Valletta, A Pecora, L Maiolo, M Cuscuna, G Fortunato

Edge effects in self-heating-related instabilities in p-channel polycrystalline-silicon thin-film transistors

IEEE Electron Device Letters [IEEE], Volume: 32 Issue: 12 Pages: 1707-1709

José Alvarez, J-P Kleider, R Trotta, Antonio Polimeni, M Capizzi, F Martelli, L Mariucci, S Rubini

Giant and reversible enhancement of the electrical resistance of GaAs 1− x N x by hydrogen irradiation

Physical Review B [American Physical Society], Volume: 84 Issue: 8 Pages: 085331

A Valletta, P Gaucci, L Mariucci, A Pecora, L Maiolo, G Fortunato

Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors

Applied Physics Letters [AIP], Volume: 99 Issue: 5 Pages: 053503

Guglielmo Fortunato, Massimo Cuscunà, Luca Maiolo, Luigi Mariucci, Matteo Rapisarda, Alessandro Pecora, Antonio Valletta, Stan D Brotherton

(Invited) Short Channel Effects and Drain Field Relief Architectures in Polysilicon TFTs

ECS Transactions [The Electrochemical Society], Volume: 37 Issue: 1 Pages: 3-14

S Del Gobbo, P Castrucci, M Scarselli, L Camilli, M De Crescenzi, L Mariucci, A Valletta, A Minotti, G Fortunato

Carbon nanotube semitransparent electrodes for amorphous silicon based photovoltaic devices

Applied Physics Letters [AIP], Volume: 98 Issue: 18 Pages: 183113

D Simeone, M Rapisarda, G Fortunato, A Valletta, L Mariucci

Influence of structural properties on environmental stability of pentacene thin film transistors

Organic Electronics [North-Holland], Volume: 12 Issue: 3 Pages: 447-452

M Rapisarda, D Simeone, G Fortunato, A Valletta, L Mariucci

Pentacene thin film transistors with (polytetrafluoroethylene) PTFE-like encapsulation layer

Organic Electronics [North-Holland], Volume: 12 Issue: 1 Pages: 119-124

Guglielmo Fortunato, Massimo Cuscunà, Paolo Gaucci, Luca Maiolo, Luigi Mariucci, Alessandro Pecora, Antonio Valletta

(Invited) downscaling issues in polycrystalline silicon TFTs

ECS Transactions [The Electrochemical Society], Volume: 33 Issue: 5 Pages: 3-22

P Gaucci, A Valletta, L Mariucci, A Pecora, L Maiolo, G Fortunato

Analysis of self-heating-related instability in self-aligned p-channel polycrystalline-silicon thin-film transistors

IEEE Electron Device Letters [IEEE], Volume: 31 Issue: 8 Pages: 830-832

Guglielmo Fortunato, Massimo Cuscunà, Paolo Gaucci, Luca Maiolo, Luigi Mariucci, Alessandro Pecora, Antonio Valletta

Downscaling Issues in Polycrystalline Silicon TFTs

Meeting Abstracts [The Electrochemical Society], Issue: 29 Pages: 1786-1786

R Trotta, L Cavigli, L Felisari, Antonio Polimeni, A Vinattieri, M Gurioli, M Capizzi, F Martelli, S Rubini, L Mariucci, M Francardi, A Gerardino

Quantum confinement effects in hydrogen-intercalated Ga 1− x As x N x-GaAs 1− x N x: H planar heterostructures investigated by photoluminescence spectroscopy

Physical Review B [American Physical Society], Volume: 81 Issue: 23 Pages: 235327

Massimo Cuscunà, Annalisa Convertino, Luigi Mariucci, Guglielmo Fortunato, Laura Felisari, Giuseppe Nicotra, Corrado Spinella, Alessandro Pecora, Faustino Martelli

Low-temperature, self-catalyzed growth of Si nanowires

Nanotechnology [IOP Publishing], Volume: 21 Issue: 25 Pages: 255601

A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato

Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects

Journal of Applied Physics [AIP], Volume: 107 Issue: 7 Pages: 074505

D Simeone, S Cipolloni, L Mariucci, M Rapisarda, A Minotti, A Pecora, M Cuscuna, L Maiolo, G Fortunato

Pentacene TFTs with parylene passivation layer

Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6283-6286

L Mariucci, P Gaucci, A Valletta, M Cuscunà, L Maiolo, A Pecora, G Fortunato

Negative bias–temperature stress in non-self-aligned p-channel polysilicon TFTs

Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6379-6382

A Valletta, M Rapisarda, L Mariucci, A Pecora, G Fortunato, C Caligiore, E Fontana, F Tramontana, S Leonardi

Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors

Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6353-6357

L Maiolo, M Cuscuna, L Mariucci, A Minotti, A Pecora, D Simeone, A Valletta, G Fortunato

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide

Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6371-6374

A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato, SD Brotherton

Role of gate oxide thickness in controlling short channel effects in polycrystalline silicon thin film transistors

Applied Physics Letters [AIP], Volume: 95 Issue: 3 Pages: 033507

R Trotta, Antonio Polimeni, M Capizzi, F Martelli, S Rubini, M Francardi, A Gerardino, L Mariucci

Light polarization control in strain-engineered GaAsN/GaAsN: H heterostructures

Applied Physics Letters [AIP], Volume: 94 Issue: 26 Pages: 261905

G Fortunato, M Cuscuna, P Gaucci, L Maiolo, L Mariucci, A Pecora, A Valletta, F Templier

Self-heating effects in p-channel polysilicon TFTs fabricated on different substrates

Journal of the Korean Physical Society [Korean Physical Society], Volume: 54 Issue: 1 Pages: 455-462

L Mariucci, S Cipolloni, D Simeone, M Cuscuna, L Maiolo, A Minotti, A Pecora, A Valletta, G Fortunato

Water-Related Instabilities in Pentacene Thin-Film Transistors

Journal of the Korean Physical Society [Korean Physical Society], Volume: 54 Issue: 1 Pages: 505-509

G Fortunato, M Cuscunà, L Maiolo, F Maita, L Mariucci, A Minotti, A Pecora, D Simeone, A Valletta, A Bearzotti, A Macagnano, S Pantalei, E Zampetti

Flexible electronics based on polysilicon thin film transistor

한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society],

A Valletta, P Gaucci, L Mariucci, G Fortunato, F Templier

“Hump” characteristics and edge effects in polysilicon thin film transistors

Journal of Applied Physics [AIP], Volume: 104 Issue: 12 Pages: 124511

P Gaucci, A Valletta, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato

Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors

Applied Physics Letters [AIP], Volume: 93 Issue: 19 Pages: 193512

V Privitera, S Scalese, A La Magna, A Pecora, M Cuscunà, L Maiolo, A Minotti, D Simeone, L Mariucci, G Fortunato, L Caristia, F Mangano, S Di Marco, M Camalleri, S Ravesi, S Coffa, MG Grimaldi, R De Bastiani, P Badalà, S Bagiante

Low-temperature annealing combined with laser crystallization for polycrystalline silicon TFTs on polymeric substrate

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 155 Issue: 10 Pages: H764-H770

L Felisari, V Grillo, F Martelli, R Trotta, Antonio Polimeni, M Capizzi, F Jabeen, L Mariucci

In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN: H heterostructures

Applied Physics Letters [AIP], Volume: 93 Issue: 10 Pages: 102116

R Trotta, Antonio Polimeni, M Capizzi, D Giubertoni, M Bersani, G Bisognin, M Berti, S Rubini, F Martelli, L Mariucci, M Francardi, A Gerardino

Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN:H heterostructures

Applied Physics Letters [AIP], Volume: 92 Issue: 22 Pages: 221901

L Mariucci, D Simeone, S Cipolloni, L Maiolo, A Pecora, G Fortunato, S Brotherton

Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer

Solid-State Electronics [Pergamon], Volume: 52 Issue: 3 Pages: 412-416

A Pecora, L Maiolo, M Cuscunà, D Simeone, A Minotti, L Mariucci, G Fortunato

Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic

Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 348-352

M Rapisarda, L Mariucci, A Valletta, A Pecora, G Fortunato, C Caligiore, E Fontana, S Leonardi, F Tramontana

Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edges

Solid-State Electronics [Pergamon], Volume: 52 Issue: 3 Pages: 406-411

Antonio Valletta, Alessandra Bonfiglietti, Matteo Rapisarda, Alessandro Pecora, Luigi Mariucci, Guglielmo Fortunato, Stan D Brotherton

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

ECS Transactions [The Electrochemical Society], Volume: 8 Issue: 1 Pages: 211-216

A Valletta, P Gaucci, L Mariucci, G Fortunato

Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7417-7421

Maria Losurdo, Maria M Giangregorio, Alberto Sacchetti, Pio Capezzuto, Giovanni Bruno, Luigi Mariucci, Guglielmo Fortunato

Insight into excimer laser crystallization exploiting ellipsometry: Effect of silicon film precursor

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7508-7512

P Gaucci, L Mariucci, A Valletta, A Pecora, G Fortunato, F Templier

Electrical stability in self-aligned p-channel polysilicon thin film transistors

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7571-7575

A Bonfiglietti, M Cuscunà, M Rapisarda, A Pecora, L Mariucci, G Fortunato, C Caligiore, E Fontana, S Leonardi, F Tramontana

Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7433-7436

S Cipolloni, L Mariucci, A Valletta, D Simeone, F De Angelis, G Fortunato

Aging effects and electrical stability in pentacene thin film transistors

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7546-7550

A Valletta, A Bonfiglietti, M Rapisarda, L Mariucci, G Fortunato, SD Brotherton

Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices

Journal of applied physics [AIP], Volume: 101 Issue: 9 Pages: 094502

G Lulli, M Bianconi, M Ferri, G Fortunato, L Mariucci

RBS-channeling analysis of ion-irradiation effects in heavily-doped Si: As

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1 Pages: 253-256

M Felici, A Polimeni, F Masia, R Trotta, G Pettinari, M Capizzi, G Salviati, L Lazzarini, N Armani, M Piccin, G Bais, F Martelli, S Rubini, A Franciosi, L Mariucci

In‐Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors

AIP Conference Proceedings [AIP], Volume: 893 Issue: 1 Pages: 31-32

Vittorio Privitera, Antonino La Magna, Corrado Spinella, Guglielmo Fortunato, Luigi Mariucci, M Cuscuna, Cateno Marco Camalleri, Angelo Magri, Giovanna La Rosa, Bengt G Svensson, Eduard V Monakhov, Frank Simon

Integration of melting excimer laser annealing in power MOS technology

IEEE Transactions on Electron Devices [IEEE], Volume: 54 Issue: 4 Pages: 852-860

Luigi Mariucci, Paolo Gaucci, Antonio Valletta, François Templier, Guglielmo Fortunato

Hot carrier effects in p-channel polycrystalline silicon thin film transistors fabricated on flexible substrates

Japanese journal of applied physics [IOP Publishing], Volume: 46 Issue: 3S Pages: 1299

Rinaldo Trotta, Antonio Polimeni, Marco Felici, Giorgio Pettinari, Mario Capizzi, Andrea Frova, Giancarlo Salviati, Laura Lazzarini, Nicola Armani, Luigi Mariucci, Giorgio Bais, Faustino Martelli, Silvia Rubini

Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering

MRS Proceedings [Cambridge University Press], Volume: 994 Pages: 0994-F02-08

Luigi Mariucci, Paolo Gaucci, Antonio Valletta, Francois Templier, Guglielmo Fortunato

TFT Characterization & Reliability-Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates

Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes [Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-], Volume: 46 Issue: 3 Pages: 1299-1302

M Peroni, P Romanini, A Pantellini, L Mariucci, A Minotti, G Ghione, V Camarchia, E Limiti, A Serino, A Chini

Design, Fabrication and Characterization of Gamma-gate GaN HEMT for High-Frequency/Wide-Band applications

Proceedings of 31st Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) [], Pages: 371-378

Antonino La Magna, Paola Alippi, Ioannis Deretzis, Vittorio Privitera, Guglielmo Fortunato, Luigi Mariucci, Angelo Magrì, Edouard Monakhov, Bengt Svensson

Ultra-shallow junction by laser annealing: Integration issues and modelling

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1 Pages: 1-8

G Fortunato, L Mariucci, M Cuscunà, V Privitera, A La Magna, C Spinella, A Magrì, M Camalleri, D Salinas, F Simon, B Svensson, E Monakhov

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

Applied physics letters [AIP], Volume: 89 Issue: 25 Pages: 253502

L Mariucci, A Valletta, P Gaucci, G Fortunato, F Templier

Hot-carrier effects in p-channel polycrystalline silicon thin film transistors

Applied physics letters [AIP], Volume: 89 Issue: 18 Pages: 183518

M Cuscunà, L Mariucci, G Fortunato, A Bonfiglietti, A Pecora, A Valletta

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

Applied physics letters [AIP], Volume: 89 Issue: 12 Pages: 123506

Antonio Valletta, Alessandro Moroni, Luigi Mariucci, Alessandra Bonfiglietti, Guglielmo Fortunato

Self-heating effects in polycrystalline silicon thin film transistors

Applied physics letters [AIP], Volume: 89 Issue: 9 Pages: 093509

F De Angelis, L Mariucci, S Cipolloni, G Fortunato

Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer

Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9 Pages: 1765-1768

M Cuscunà, G Stracci, A Bonfiglietti, A Di Gaspare, L Maiolo, A Pecora, L Mariucci, G Fortunato

Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors

Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9 Pages: 1723-1727

A Bonfiglietti, A Valletta, M Rapisarda, L Mariucci, G Fortunato

Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped Lightly Doped Drain Polysilicon Thin-Film

Japanese journal of applied physics [IOP Publishing], Volume: 45 Issue: 5S Pages: 4384

A Valletta, P Gaucci, L Mariucci, G Fortunato

Modelling velocity saturation effects in polysilicon thin-film transistors

Japanese journal of applied physics [IOP Publishing], Volume: 45 Issue: 5S Pages: 4374

G Fortunato, V Privitera, A La Magna, L Mariucci, M Cuscunà, BG Svensson, E Monakhov, M Camalleri, A Magrì, D Salinas, F Simon

Excimer Laser annealing for shallow junction formation in Si power MOS devices

Thin Solid Films [Elsevier], Volume: 504 Issue: 1 Pages: 2-6

F De Angelis, S Cipolloni, L Mariucci, G Fortunato

Aging effects in pentacene thin-film transistors: Analysis of the density of states modification

Applied physics letters [AIP], Volume: 88 Issue: 19 Pages: 193508

T Toccoli, A Pallaoro, N Coppedè, S Iannotta, F De Angelis, L Mariucci, G Fortunato

Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

Applied physics letters [AIP], Volume: 88 Issue: 13 Pages: 132106

P Gaucci, A Valletta, L Mariucci, G Fortunato, SD Brotherton

Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

IEEE Transactions on Electron Devices [IEEE], Volume: 53 Issue: 3 Pages: 573-577

G Fortunato, M Cuscuna, L Mariucci, A Bonfiglietti, A Pecora, A Valletta

Asymmetric fingered TFT structure: a new architecture for kink effect and off-current suppression and improved stability

Journal of the Korean Physical Society [], Volume: 48 Issue: 91 Pages: S64-S71

V Privitera, P Alippi, M Camalleri

Perspectives and advantages of the use of excimer laser annealing for MOS technology

Nuovo Cimento della Societa Italiana di Fisica. C, Geophysics and Space Physics [], Volume: 29 Issue: 3 Pages: 369-379

A Valletta, L Mariucci, G Fortunato

Hot-carrier-induced degradation of LDD polysilicon TFTs

IEEE Transactions on Electron Devices [IEEE], Volume: 53 Issue: 1 Pages: 43-50

Vittorio Camarchia, S Donati Guerrieri, Marco Pirola, Valeria Teppati, A Ferrero, Giovanni Ghione, M Peroni, P Romanini, C Lanzieri, S Lavanga, A Serino, E Limiti, L Mariucci

Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high‐power applications

International Journal of RF and Microwave Computer‐Aided Engineering [Wiley Subscription Services, Inc., A Wiley Company], Volume: 16 Issue: 1 Pages: 70-80

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscuna, L Mariucci

Excimer laser annealing of B and BF 2 implanted Si

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 232-234

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscuna, L Mariucci

Boron distribution in silicon after excimer laser annealing with multiple pulses

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 228-231

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscunà, L Mariucci

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

Applied Physics Letters [AIP], Volume: 87 Issue: 19 Pages: 192109

M Cuscunà, L Mariucci, G Fortunato, A Bonfiglietti, A Pecora, A Valletta

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

Thin solid films [Elsevier], Volume: 487 Issue: 1 Pages: 237-241

G Fortunato, A Valletta, P Gaucci, L Mariucci, SD Brotherton

Short channel effects in polysilicon thin film transistors

Thin Solid Films [Elsevier], Volume: 487 Issue: 1 Pages: 221-226

A Di Gaspare, L Mariucci, A Pecora, G Fortunato

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

Thin Solid Films [Elsevier], Volume: 487 Issue: 1 Pages: 232-236

A Valletta, L Mariucci, A Bonfiglietti, G Fortunato, SD Brotherton

Channel doping effects in poly-Si thin film transistors

Thin solid films [Elsevier], Volume: 487 Issue: 1 Pages: 242-246

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscunà, L Mariucci

Boron distribution in silicon after multiple pulse excimer laser annealing

Applied Physics Letters [AIP], Volume: 87 Issue: 8 Pages: 081901

A Bonfiglietti, A Valletta, P Gaucci, L Mariucci, G Fortunato, SD Brotherton

Electrical characterization of directionally solidified polycrystalline silicon

Journal of applied physics [AIP], Volume: 98 Issue: 3 Pages: 033702

A Pecora, L Maiolo, A Bonfiglietti, M Cuscunà, F Mecarini, Luigi Mariucci, Guglielmo Fortunato, ND Young

Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing

Microelectronics Reliability [Pergamon], Volume: 45 Issue: 5 Pages: 879-882

F De Angelis, S Cipolloni, L Mariucci, G Fortunato

High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer

Applied Physics Letters [AIP], Volume: 86 Issue: 20 Pages: 203505

A Valletta, L Mariucci, A Bonfiglietti, G Fortunato, SD Brotherton

Dopant and defect interactions in polycrystalline silicon thin-film transistors

Journal of applied physics [AIP], Volume: 97 Issue: 10 Pages: 104515

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, C Spinella, C Bongiorno, V Privitera, G Fortunato, L Mariucci

Enhanced boron diffusion in excimer laser preannealed Si

Applied Physics Letters [AIP], Volume: 86 Issue: 15 Pages: 151902

Giovanni Mannino, Vittorio Privitera, Antonino La Magna, Emanuele Rimini, Enrico Napolitani, Guglielmo Fortunato, Luigi Mariucci

Depth distribution of B implanted in Si after excimer laser irradiation

Applied Physics Letters [AIP], Volume: 86 Issue: 5 Pages: 051909

Antonio Valletta, Matteo Rapisarda, Sabrina Calvi, Luigi Mariucci, Guglielmo Fortunato

A large signal non quasi static compact model for printed organic thin film transistors

Solid-State Device Research Conference (ESSDERC), 2016 46th European [IEEE], Pages: 460-463

Matteo Rapisarda, Sabrina Calvi, Antonio Valletta, Guglielmo Fortunato, Luigi Mariucci, Maurizio Greco, Vincenzo Vinciguerra

Water stable organic thin film transistors (TFTs) made on flexible substrates

Nanotechnology (IEEE-NANO), 2015 IEEE 15th International Conference on [IEEE], Pages: 1430-1433

M Rapisarda, L Maiolo, F Maita, S Calvi, A Ferrone, A Minotti, A Pecora, L Mariucci, G Fortunato

Fully-organic flexible tactile sensor for advanced robotic applications

Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th [IEEE], Pages: 45-48

Stéphanie Jacob, Mohamed Benwadih, Jacqueline Bablet, Isabelle Chartier, Romain Gwoziecki, Sahel Abdinia, Eugenio Cantatore, Lidia Maddiona, Francesca Tramontana, Giorgio Maiellaro, Luigi Mariucci, Giuseppe Palmisano, Romain Coppard

High performance printed N and P-type OTFTs for complementary circuits on plastic substrate

Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European [IEEE], Pages: 173-176

Sahel Abdinia, Mohamed Benwadih, Eugenio Cantatore, Isabelle Chartier, Stéphanie Jacob, Lidia Maddiona, Giorgio Maiellaro, Luigi Mariucci, Giuseppe Palmisano, Matteo Rapisarda, Francesca Tramontana, Arthur HM van Roermund

Design of analog and digital building blocks in a fully printed complementary organic technology

ESSCIRC (ESSCIRC), 2012 Proceedings of the [IEEE], Pages: 145-148

Alessandro Pecora, Luca Maiolo, E Zampetti, S Pantalei, A Valletta, A Minotti, F Maita, D Simeone, M Cuscuna, A Bearzotti, A Macagnano, L Mariucci, G Fortunato

Chemoresistive nanofibrous sensor array and read-out electronics on flexible substrate

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International [IEEE], Pages: 144-147

A Pecora, E Zampetti, S Pantalei, A Valletta, A Minotti, L Maiolo, D Simeone, M Cuscunà, A Bearzotti, A Macagnano, L Mariucci, G Fortunato

Interdigitated sensorial system on flexible substrate

Sensors, 2008 IEEE [IEEE], Pages: 21-24

EV Monakhov, BG Svensson, A La Magna, P Alippi, M Italia, V Privitera, G Fortunato, L Mariucci, F Tumisto, K Kuitunen

Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation

Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on [IEEE], Pages: 31-35

G Fortunato, A Pecora, L Maiolo, M Cuscuna, D Simeone, A Minotti, L Mariucci

Excimer laser annealing for low-temperature polysilicon thin film transistor fabrication on plastic substrates

Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on [IEEE], Pages: 301-305

M Felici, Antonio Polimeni, F Masia, R Trotta, G Pettinari, M Capizzi, G Salviati, L Lazzarini, N Armani, M Piccin, G Bais, F Martelli, S Rubini, A Franciosi, L Mariucci

AIP Conference Proceedings

28th International Conference on the Physics of Semiconductors, ICPS 2006 [],

F Sinisi, L Mariucci, MC Rossi, G Conte, E Limiti, S Lavanga, C Lanzieri, A Cetronio, V Konov, V Ralchenko

Comportamento in DC ea radiofrequenza di MESFET a canale superficiale in diamante polycrystallino

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P Romanini, M Peroni, C Lanzieri, A Cetronio, M Calori, A Passaseo, B Poti, A Chini, L Mariucci, A Di Gaspare, Valeria Teppati, Vittorio Camarchia

Very High Performance GaN HEMT devices by optimized buffer and field plate technology

European Microwave Integrated Circuits Conference, 2006. The 1st [IEEE], Pages: 61-64

L Felisari, V Grillo, S Rubini, F Martelli, R Trotta, A Polimeni, M Capizzi, L Mariucci

Secondary Electrons Characterization of Hydrogenated Dilute Nitrides

EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany [Springer Berlin Heidelberg], Pages: 541-542

Dario Salinas, Guglielmo Fortunato, Angelo Magri, Luigi Mariucci, Massimo Cuscuna, Cateno Marco Camalleri, , Cateno Marco Camalleri, , , Cateno Marco Camalleri

Process for manufacturing a large-scale integration MOS device and corresponding MOS device

US8283702 [],

Dario Salinas, Guglielmo Fortunato, Angelo Magri, Luigi Mariucci, Massimo Cuscuna, Cateno Marco Camalleri, , Cateno Marco Camalleri, , , Cateno Marco Camalleri

Process for manufacturing a large-scale integration MOS device and corresponding MOS device

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Salvatore Leonardi, Salvatore Coffa, Claudia Caligiore, Guglielmo Fortunato, Luigi Mariucci, Massimo Cuscuna, , Massimo Cuscuna

Process for manufacturing a TFT device with source and drain regions having gradual dopant profile

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Salvatore Leonardi, Claudia Caligiore, Guglielmo Fortunato, Luigi Mariucci, Stefano Cipolloni, Francesco Angelis, , Francesco Angelis

Organic thin-film transistor device and corresponding manufacturing method

US20070262297 [],