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She received her Master’s degree in Physics in 1996 from the University of Rome Tor Vergata. She holds a Ph.D. in Material Science in 2001 from the University of Rome La Sapienza. From 2000 to 2001 she worked as a Post-Doc at the University of Aachen (RWTH). From 2001 to 2010 she was with the Research Center Jülich, Germany, at first in the “Tenure-track” excellence program and then as a Senior Research Scientist, focusing on III-nitride nanowires. In 2010 she received the Habilitation in Physics from the RWTH Aachen and in 2012 from the Humboldt University in Berlin. She obtained the Habilitation to full Professor competitions in Italy. From September 2010 till August 2019 she was with PDI, working on the one hand on epitaxy of III-nitride nanostructures and layers on the other hand on epitaxial growth of phase-change materials for memory applications. At present she is with CNR-IMM unit Rome working on phase-change materials for memory applications. She is author or co-author of about 127 publications, 27 proceedings, 63 invited talks, 4 book chapters, 6 invited review papers, and 2 patents 1 sold to Micron Technology. She has more than 5000 citations and her current Hirsch index is 37 (on Google Scholar).
Highlights:
Scientific Productions
Ultramicroscopy [North-Holland], Pages: 114063
Stable chalcogenide Ge–Sb–Te heterostructures with minimal Ge segregation
Scientific Reports [Nature Publishing Group UK], Volume: 14 Issue: 1 Pages: 15713
Advanced Materials Technologies [], Volume: 9 Issue: 1 Pages: 2301282
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe‐Rich (GeTe)m(Sb2Te3)n Lamellae
Advanced Science [], Volume: 11 Issue: 1 Pages: 2304785
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics
Advanced Electronic Materials [], Pages: 2400184
npj 2D Materials and Applications [Nature Publishing Group UK], Volume: 7 Issue: 1 Pages: 19
Characterisation of optical phonons within epitaxial Ge2Sb2Te5/InAs (111) structures
Solid State Communications [Pergamon], Volume: 351 Pages: 114788
Structural and Electrical Properties of Annealed Ge2Sb2Te5 Films Grown on Flexible Polyimide
Nanomaterials [MDPI], Volume: 12 Issue: 12 Pages: 2001
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.
Nanomaterials (Basel, Switzerland) [], Volume: 12 Issue: 8
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
Nanomaterials [MDPI], Volume: 12 Issue: 8 Pages: 1340
Nanomaterials [MDPI], Volume: 12 Issue: 6 Pages: 1007
Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys
Nanomaterials [MDPI], Volume: 12 Issue: 4 Pages: 631
Carrier Diffusion in : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion
Physical Review Applied [American Physical Society], Volume: 17 Issue: 2 Pages: 024018
Advanced Materials Interfaces [], Pages: 2101556
Synthesis, Properties and Applications of Germanium Chalcogenides [s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil-iations.], Pages: 5
Epitaxial growth of GeTe/Sb2Te3 superlattices
Materials Science in Semiconductor Processing [Pergamon], Volume: 137 Pages: 106244
Semiconductors [Pleiades Publishing], Pages: 1-6
Keep it simple and switch to pure tellurium
Science [American Association for the Advancement of Science], Volume: 374 Issue: 6573 Pages: 1321-1322
Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3358
Crystallography Reports [Pleiades Publishing], Volume: 66 Issue: 6 Pages: 1167-1167
MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires
Coatings [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 718
Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
arXiv preprint arXiv:2103.07646 [],
Evolution of Low‐Frequency Vibrational Modes in Ultrathin GeSbTe Films
physica status solidi (RRL)–Rapid Research Letters [], Volume: 15 Issue: 3 Pages: 2000434
arXiv preprint arXiv:2009.14634 [],
Carrier diffusion in GaN--a cathodoluminescence study. II: Ambipolar vs. exciton diffusion
arXiv preprint arXiv:2009.13983 [],
Influence of Mg doping on In adsorption and In incorporation in (In, Ga) N superlattices
Journal of Applied Physics [AIP Publishing LLC], Volume: 128 Issue: 8 Pages: 085303
Phonon anharmonicities and ultrafast dynamics in epitaxial Sb 2 Te 3
Scientific reports [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-9
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Alloys
Physical Review Applied [American Physical Society], Volume: 14 Issue: 1 Pages: 014028
Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Alloys
Physical Review Applied [American Physical Society], Volume: 14 Issue: 1 Pages: 014028
Crystallization of nano amorphized regions in thin epitaxial layer of Ge2Sb2Te5
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 19 Pages: 194001
arXiv preprint arXiv:2002.08713 [],
Disordering process of GeSb2Te4 induced by ion irradiation
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 13 Pages: 134001
Disordering processes of GeSb2Te4 induced by ion irradiation
Journal of Physics D: Applied Physics [IOP Publishing],
Role of hole confinement in the recombination properties of InGaN quantum structures
Scientific reports [Nature Publishing Group], Volume: 9 Issue: 1 Pages: 1-10
Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 13 Issue: 4 Pages: 1800634
Crystallization Study of Ge‐Rich (GeTe)m(Sb2Te3)n Using Two‐Step Annealing Process
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 13 Issue: 4 Pages: 1800632
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 13 Issue: 4 Pages: 1970021
Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys
Advanced functional materials [], Volume: 29 Issue: 2 Pages: 1805184
InN and GaN/InN monolayers grown on ZnO() and ZnO(0001)
Journal of Applied Physics [AIP Publishing LLC], Volume: 124 Issue: 11 Pages: 115305
Designing epitaxial GeSbTe alloys by tuning the phase, the composition, and the vacancy ordering
Journal of Applied Physics [AIP Publishing LLC], Volume: 123 Issue: 21 Pages: 215304
InN and GaN/InN monolayers grown on ZnO {0001}
arXiv preprint arXiv:1805.11495 [],
Electrical and optical properties of epitaxial binary and ternary GeTe-Sb 2 Te 3 alloys
Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-8
2D or not 2D: strain tuning in weakly coupled heterostructures
Advanced Functional Materials [], Volume: 28 Issue: 14 Pages: 1705901
SCIENTIFIC REPORTS [NATURE PUBLISHING GROUP], Volume: 8
Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-2
Mapping the band structure of GeSbTe phase change alloys around the Fermi level
Communications Physics [Nature Publishing Group], Volume: 1 Issue: 1 Pages: 1-11
Selective solvent-induced stabilization of polar oxide surfaces in an electrochemical environment
Physical review letters [American Physical Society], Volume: 120 Issue: 6 Pages: 066101
Ferroelectric control of the spin texture in GeTe
Nano letters [American Chemical Society], Volume: 18 Issue: 5 Pages: 2751-2758
Physical origin of transient negative capacitance in a ferroelectric capacitor
Physical Review Applied [American Physical Society], Volume: 9 Issue: 1 Pages: 014010
Tailoring the epitaxy of Sb 2 Te 3 and GeTe thin films using surface passivation
CrystEngComm [Royal Society of Chemistry], Volume: 20 Issue: 3 Pages: 340-347
Exploring the subsurface atomic structure of the epitaxially grown phase-change material
Physical Review B [American Physical Society], Volume: 96 Issue: 24 Pages: 245408
Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces
AIP Advances [AIP Publishing LLC], Volume: 7 Issue: 8 Pages: 085113
Ferroelectric control of the spin texture in germanium telluride
arXiv preprint arXiv:1707.07043 [],
Self-Limited In Incorporation in (In, Ga) N/GaN Short-Period Superlattices
Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 9 Issue: 7 Pages: 1118-1122
Unconventional Strain Relaxation of Sb2Te3 Grown on a GeTe/Sb2Te3/GeTe Heterostructure on Si (111)
Nanoscience and Nanotechnology Letters [American Scientific Publishers], Volume: 9 Issue: 7 Pages: 1114-1117
Formation of resonant bonding during growth of ultrathin GeTe films
NPG Asia Materials [Nature Publishing Group], Volume: 9 Issue: 6 Pages: e396-e396
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-9
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-7
Applied Physics Letters [AIP Publishing LLC], Volume: 110 Issue: 7 Pages: 072104
Applied Physics Letters [], Volume: 110 Issue: 7
APL Materials [AIP Publishing LLC], Volume: 5 Issue: 2 Pages: 026107
AIP Advances [AIP Publishing LLC], Volume: 7 Issue: 1 Pages: 015106
Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters
ACS Photonics [American Chemical Society], Volume: 4 Issue: 1 Pages: 52-62
arXiv preprint arXiv:1701.04680 [],
Chemical and structural arrangement of the trigonal phase in GeSbTe thin films
Nanotechnology [IOP Publishing], Volume: 28 Issue: 6 Pages: 065706
CrystEngComm [], Volume: 19 Pages: 5336
Efficiency Analysis of Roundabout with Traffic Signals
Transportation Research Procedia [Elsevier], Volume: 20 Pages: 443-449
Top publications last week by reads
Transportation Research Procedia [], Volume: 27 Pages: 1001-1008
Dynamic reconfiguration of van der Waals gaps within GeTe–Sb 2 Te 3 based superlattices
Nanoscale [Royal Society of Chemistry], Volume: 9 Issue: 25 Pages: 8774-8780
GeTe: a simple compound blessed with a plethora of properties
CrystEngComm [Royal Society of Chemistry], Volume: 19 Issue: 36 Pages: 5324-5335
Luminous efficiency of ordered arrays of GaN nanowires with subwavelength diameters
ACS Photonics [American Chemical Society], Volume: 4 Issue: 1 Pages: 52-62
Spin mapping of surface and bulk Rashba states in ferroelectric -GeTe(111) films
Physical Review B [American Physical Society], Volume: 94 Issue: 20 Pages: 201403
Epitaxial Ge2Sb2Te5 probed by single cycle THz pulses of coherent synchrotron radiation
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 14 Pages: 141903
Atomic stacking and van-der-Waals bonding in GeTe–Sb2Te3 superlattices
Journal of Materials Research [Springer International Publishing], Volume: 31 Issue: 20 Pages: 3115-3124
Ultrafast Ge-Te bond dynamics in a phase-change superlattice
Physical Review B [American Physical Society], Volume: 94 Issue: 9 Pages: 094310
Investigation of interface abruptness and In content in (In, Ga) N/GaN superlattices
Journal of Applied Physics [AIP Publishing LLC], Volume: 120 Issue: 12 Pages: 125307
Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin films
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-8
Interband characterization and electronic transport control of nanoscaled superlattices
Physical Review B [American Physical Society], Volume: 94 Issue: 4 Pages: 045319
Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 4 Pages: 042104
Intermixing during Epitaxial Growth of van der Waals Bonded Nominal GeTe/Sb2Te3 Superlattices
Crystal Growth & Design [American Chemical Society], Volume: 16 Issue: 7 Pages: 3596-3601
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-7
Laser induced structural transformation in chalcogenide based superlattices
Applied Physics Letters [AIP Publishing LLC], Volume: 108 Issue: 22 Pages: 221904
Insights into ultrafast Ge-Te bond dynamics in a phase-change superlattice
arXiv preprint arXiv:1605.08157 [],
Applied Surface Science [North-Holland], Volume: 369 Pages: 159-162
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-7
Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-8
Evidence for spin to charge conversion in GeTe (111)
APL Materials [AIP Publishing LLC], Volume: 4 Issue: 3 Pages: 032501
Evidence for spin to charge conversion in GeTe (111)
APL MATERIALS [AIP Publishing],
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
Scientific reports [Nature Publishing Group], Volume: 6 Issue: 1 Pages: 1-9
Mapováni spinů povrchových a bulkových Rashba stavů v tenkých vrstvách feroelektrického α-GeTe (111)
Physical review B [American Physical Society],
Corrigendum: Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials
Scientific reports [Nature Publishing Group], Volume: 6
Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe (111)
Advanced Materials [], Volume: 28 Issue: 3 Pages: 560-565
Coincident-site lattice matching during van der Waals epitaxy
Scientific reports [Nature Publishing Group], Volume: 5 Issue: 1 Pages: 1-8
Crystal Growth & Design [American Chemical Society], Volume: 15 Issue: 10 Pages: 4886-4892
Journal of Applied Physics [AIP Publishing LLC], Volume: 117 Issue: 12 Pages: 125308
Understanding Epitaxial Growth of Phase-Change Materials through Studies of the Local Structure
SPring-8/SACLA Research Report [Japan Synchrotron Radiation Research Institute], Volume: 3 Issue: 1 Pages: 10-13
Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 2 Pages: 023117
Phase Transitions [Taylor & Francis], Volume: 88 Issue: 1 Pages: 82-89
Nanoscale [Royal Society of Chemistry], Volume: 7 Issue: 45 Pages: 19136-19143
Toward truly single crystalline GeTe films: The relevance of the substrate surface
The Journal of Physical Chemistry C [American Chemical Society], Volume: 118 Issue: 51 Pages: 29724-29730
Ferroelectricity and Rashba effect in GeTe
arXiv preprint arXiv:1412.2386 [],
MRS Online Proceedings Library [Springer International Publishing], Volume: 1661 Issue: 1 Pages: 22-27
Picosecond strain dynamics in monitored by time-resolved x-ray diffraction
Physical Review B [American Physical Society], Volume: 90 Issue: 9 Pages: 094305
Structural change upon annealing of amorphous GeSbTe grown on Si (111)
Journal of Applied Physics [], Volume: 116 Issue: 5
Structural change upon annealing of amorphous GeSbTe grown on Si (111)
Journal of Applied Physics [AIP Publishing LLC], Volume: 116 Issue: 5 Pages: 054913
Green luminescence in Mg-doped GaN
Physical Review B [American Physical Society], Volume: 90 Issue: 3 Pages: 035207
Scientific reports [Nature Publishing Group], Volume: 4 Issue: 1 Pages: 1-7
Growth control of epitaxial GeTe–Sb2Te3 films using a line-of-sight quadrupole mass spectrometer
Journal of crystal growth [North-Holland], Volume: 396 Pages: 50-53
Nano letters [American Chemical Society], Volume: 14 Issue: 6 Pages: 3534-3538
Resonant electron tunneling in a tip-controlled potential landscape
Physical Review B [American Physical Society], Volume: 89 Issue: 24 Pages: 245408
Ferroelectric switching in epitaxial GeTe films
APL Materials [], Volume: 2 Issue: 6
Ferroelectric switching in epitaxial GeTe films
APL Materials [American Institute of Physics], Volume: 2 Issue: 6 Pages: 066101
Long‐range crystal‐lattice distortion fields of epitaxial Ge–S b–T e phase‐change materials
physica status solidi (b) [], Volume: 251 Issue: 4 Pages: 769-773
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 26 Issue: 9 Pages: 095802
Evidence for topological band inversion of the phase change material Ge2Sb2Te5
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 24 Pages: 243109
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
Physical Review B [American Physical Society], Volume: 88 Issue: 7 Pages: 075312
Transport properties in a Sb–Te binary topological-insulator system
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 25 Issue: 34 Pages: 345801
Toward spin electronic devices based on semiconductor nanowires
Future Trends in Microelectronics [], Pages: 328-339
Tunable thermal quenching of photoluminescence in Mg-doped -type GaN
Physical Review B [American Physical Society], Volume: 87 Issue: 11 Pages: 115205
Scanning tunneling microscopy and spectroscopy of the phase change alloy Ge2Sb2Te5
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity
Nano letters [American Chemical Society], Volume: 12 Issue: 12 Pages: 6119-6125
MRS online proceedings library [Springer International Publishing], Volume: 1408 Issue: 1 Pages: 29-34
Cover Picture: Epitaxial phase‐change materials (Phys. Status Solidi RRL 11/2012)
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 6 Issue: 11
Epitaxial phase‐change materials
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 6 Issue: 11 Pages: 415-417
Current path in light emitting diodes based on nanowire ensembles
Nanotechnology [IOP Publishing], Volume: 23 Issue: 46 Pages: 465301
Growth of wurtzite InN on bulk In2O3(111) wafers
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172102
Growth of wurtzite InN on bulk In {sub 2} O {sub 3}(111) wafers
Applied Physics Letters [], Volume: 101 Issue: 17
On the epitaxy of germanium telluride thin films on silicon substrates
physica status solidi (b) [WILEY‐VCH Verlag], Volume: 249 Issue: 10 Pages: 1939-1944
Robust topological surface states in Sb 2 Te 3 layers as seen from the weak antilocalization effect
Physical Review B [American Physical Society], Volume: 86 Issue: 12 Pages: 125137
Electrical spin injection into InN semiconductor nanowires
Nano letters [American Chemical Society], Volume: 12 Issue: 9 Pages: 4437-4443
Recrystallization of an amorphized epitaxial phase-change alloy: A phoenix arising from the ashes
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 6 Pages: 061903
Crystalline GeTe-based phase-change alloys: Disorder in order
Physical Review B [American Physical Society], Volume: 86 Issue: 4 Pages: 045212
Molecular beam epitaxy of Ge-Sb-Te thin films on Si substrates
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Nanosession: Phase Change Materials
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany [Wiley‐VCH Verlag GmbH & Co. KGaA], Pages: 155-162
Double resonance Raman effects in InN nanowires
Physica Status Solidi (RRL)–rapid research letters [WILEY‐VCH Verlag], Volume: 6 Issue: 4 Pages: 160-162
The influence of Mg doping on the nucleation of self-induced GaN nanowires
AIP Advances [American Institute of Physics], Volume: 2 Issue: 1 Pages: 012157
Longer InN phonon lifetimes in nanowires
Nanotechnology [IOP Publishing], Volume: 23 Issue: 8 Pages: 085702
Epitaxy of Single Crystal Phase Change Materials on Si (111)
MRS Online Proceedings Library [Springer International Publishing], Volume: 1338 Issue: 1 Pages: 5-10-01-5-10-06
Insight into the growth and control of single-crystal layers of Ge–Sb–Te phase-change material
Crystal growth & design [American Chemical Society], Volume: 11 Issue: 10 Pages: 4606-4610
Surface-induced effects in GaN nanowires
Journal of materials research [Cambridge University Press], Volume: 26 Issue: 17 Pages: 2157
Effects of doping profile on the optoelectronic properties of GaN nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 10 Pages: 103102
Properties of uniform diameter InN nanowires obtained under Si doping
Nanotechnology [IOP Publishing], Volume: 22 Issue: 12 Pages: 125704
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
Nanotechnology [IOP Publishing], Volume: 22 Issue: 9 Pages: 095603
Doping of III-nitride nanowires grown by molecular beam epitaxy
IEEE journal of selected topics in quantum electronics [Ieee], Volume: 17 Issue: 4 Pages: 859-868
Sixteenth International Conference on Molecular Beam Epitaxy Berlin, Germany, August 22–27, 2010
Journal of Crystal Growth [], Volume: 323 Pages: 3-4
Journal of applied physics [American Institute of Physics], Volume: 109 Issue: 1 Pages: 014309
Epitaxial growth of GeTe on Si (111) and in-situ compositional analysis
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Ivestigation of an InGaN-GaN nanowire heterstructure
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Universal conductance fluctuations and localization effects in InN nanowires connected in parallel
Journal of applied physics [American Institute of Physics], Volume: 108 Issue: 11 Pages: 113704
Applied Physics Letters [American Institute of Physics], Volume: 97 Issue: 22 Pages: 221906
Quantum quench dynamics and population inversion in bilayer graphene
Physical Review B [American Physical Society], Volume: 82 Issue: 12 Pages: 125441
Raman scattering on intrinsic surface electron accumulation of InN nanowires
Applied physics letters [American Institute of Physics], Volume: 97 Issue: 9 Pages: 093104
Nanowires: Technology, physics and perspectives
Future Trends in Microelectronics: From Nanophotonics to Sensors to Energy [John Wiley & Sons], Pages: 171
Nanotechnology [IOP Publishing], Volume: 21 Issue: 31 Pages: 315702
Vertical and lateral heterostructure of GaN/InGaN within nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
MBE grown InN nanowires: Doping effects of Si and Mg
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Electrical characterization of metal contacts on p-doped galliumnitride nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Selective MBE-growth of GaN nanowires on patterned substrates
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Mg-doped GaN nanowires: Their optical and morphological properties
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Morphology and Optical Properties of Mg Doped GaNNanowires in Dependence of Growth Temperature
Journal of Optoelectronics and Advanced Materials [Brookhaven National Laboratory (BNL) Center For Functional Nanomaterials], Volume: 12 Issue: BNL-93776-2010-JA
Josephson supercurrent in Nb/InN-nanowire/Nb junctions
Applied physics letters [American Institute of Physics], Volume: 96 Issue: 13 Pages: 132504
Highly polarized Raman scattering anisotropy in single GaN nanowires
Applied physics letters [American Institute of Physics], Volume: 96 Issue: 9 Pages: 091907
Quantum transport in narrow‐gap semiconductor nanocolumns
physica status solidi c [WILEY‐VCH Verlag], Volume: 7 Issue: 2 Pages: 386-389
Spin-orbit coupling and phase-coherent transport in InN nanowires
Physical Review B [American Physical Society], Volume: 80 Issue: 12 Pages: 125321
Electrical transport properties of single undoped and n-type doped InN nanowires
Nanotechnology [IOP Publishing], Volume: 20 Issue: 40 Pages: 405206
Phase-coherent transport and spin-orbit coupling in InN nanowires connected in parallel
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
GaN and InN nanowires: Si and Mg doping
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Gate-controlled conductance fluctuations in InN nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Semiconductor nanowires as building blocks for quantum devices
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Phase-coherence and symmetry in four-terminal magnetotransport measurements on InN nanowires
Applied physics letters [American Institute of Physics], Volume: 94 Issue: 25 Pages: 252107
Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
Journal of applied physics [American Institute of Physics], Volume: 105 Issue: 12 Pages: 123707
Formation of GaN nanodots on Si (1 1 1) by droplet nitridation
Journal of crystal growth [North-Holland], Volume: 311 Issue: 13 Pages: 3389-3394
Phase-coherent transport in InN nanowires: Analysis by four-terminal measurements
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Gate-controlled conductance fluctuations in InN nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [],
Doping concentration of GaN nanowires determined by opto-electrical measurements
Nano letters [American Chemical Society], Volume: 8 Issue: 9 Pages: 3056-3059
Flux quantization effects in InN nanowires
Nano letters [American Chemical Society], Volume: 8 Issue: 9 Pages: 2834-2838
Self-assembled growth of GaN nanowires
Journal of Physics: Conference Series [IOP Publishing], Volume: 126 Issue: 1 Pages: 012026
Franz-Keldysh effect in GaN nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 43
Determining doping concentration and mobility in GaN nanowires by opto-electrical characterization
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 43
Interface and wetting layer effect on the catalyst‐free nucleation and growth of GaN nanowires
Small [WILEY‐VCH Verlag], Volume: 4 Issue: 6 Pages: 751-754
Acoustic charge transport in GaN nanowires
Nanotechnology [IOP Publishing], Volume: 19 Issue: 27 Pages: 275708
Phase-coherent transport in InN nanowires of various sizes
Physical Review B [American Physical Society], Volume: 77 Issue: 20 Pages: 201301
Temperature dependence of the phase-coherence length in InN nanowires
Applied physics letters [American Institute of Physics], Volume: 92 Issue: 13 Pages: 132101
Investigation on localized states in GaN nanowires
Acs Nano [American Chemical Society], Volume: 2 Issue: 2 Pages: 287-292
Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy
Nano letters [American Chemical Society], Volume: 7 Issue: 8 Pages: 2248-2251
Franz− Keldysh effect in GaN nanowires
Nano letters [American Chemical Society], Volume: 7 Issue: 7 Pages: 2166-2170
GaN and InN nanowires grown by MBE: A comparison
Applied Physics A [Springer-Verlag], Volume: 87 Issue: 3 Pages: 499-503
Mechanism of molecular beam epitaxy growth of GaN nanowires on Si (111)
Applied Physics Letters [American Institute of Physics], Volume: 90 Issue: 12 Pages: 123117
Nanoscale imaging of surface piezoresponse on GaN epitaxial layers
Applied surface science [North-Holland], Volume: 253 Issue: 9 Pages: 4300-4306
Assembly of ordered carbon shells on GaN nanowires
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 9 Pages: 093118
Photoluminescence and intrinsic properties of MBE-grown InN nanowires
Nano letters [American Chemical Society], Volume: 6 Issue: 7 Pages: 1541-1547
Defect distribution along single GaN nanowhiskers
Nano letters [American Chemical Society], Volume: 6 Issue: 7 Pages: 1548-1551
Acoustoelectric current in single GaN-whiskers
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 41
Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 18 Issue: 26 Pages: 5825
Surface enhanced Raman scattering by GaN nanocolumns
physica status solidi c [WILEY‐VCH Verlag], Volume: 3 Issue: 6 Pages: 2065-2068
Anisotropic FMR‐linewidth of triple‐domain Fe layers on hexagonal GaN (0001)
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 203 Issue: 7 Pages: 1567-1572
MBE growth optimization of InN nanowires
Journal of crystal growth [North-Holland], Volume: 290 Issue: 1 Pages: 241-247
The state of strain in single GaN nanocolumns as derived from micro-photoluminescence measurements
Nano letters [American Chemical Society], Volume: 6 Issue: 4 Pages: 704-708
GaN-nanowhiskers: MBE-growth conditions and optical properties
Journal of crystal growth [North-Holland], Volume: 289 Issue: 1 Pages: 381-386
Structural investigations of MBE-grown InN nano-whiskers
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 41 Issue: 1
Electrical and optical characterisation of GaN and InN nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 41 Issue: 1
Self-assembly of nitride nanowires grown by MBE
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 41 Issue: 1
Epitaxial growth and characterization of Fe thin films on wurtzite GaN (0 0 0 1)
Journal of crystal growth [North-Holland], Volume: 283 Issue: 3-4 Pages: 500-507
FMR study of thin Fe layers grown on hexagonal GaN
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 40
Fe on GaN: growth investigations
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 40
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 40
Electrical transport in GaN-whiskers
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 40
GaN nanowhiskers: epitaxial growth
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 40
Size-dependent photoconductivity in MBE-grown GaN− nanowires
Nano letters [American Chemical Society], Volume: 5 Issue: 5 Pages: 981-984
Epitaxial growth of Fe on GaN (0001): structural and magnetic properties
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 202 Issue: 5 Pages: 754-757
Piezoresponse force microscopy for imaging of GaN surfaces
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 202 Issue: 5 Pages: 785-789
vd Hart, A.; Stoica, T.; Lüth, H
Nano Lett [], Volume: 5 Issue: 5 Pages: 981-984
Microphotoluminescence Studies on Single GaN Nanocolumns
MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 892
Materials Research Society (MRS) Spring Meeting [],
Room-temperature ferroelectric control of spin-to-charge conversion in GeTe
Spintronics XIV [International Society for Optics and Photonics], Volume: 11805 Pages: 118052A
Towards the Investigation of Electronic Properties of Epitaxial Phase Change Materials
Materials Research Society (MRS) Spring Meeting [],
Investigation of charge-to-spin conversion in GeTe
Spintronics XI [International Society for Optics and Photonics], Volume: 10732 Pages: 107320C
The reversible spin texture of ferroelectric GeTe for a tunable source of spin currents
2018 IEEE International Magnetics Conference (INTERMAG) [IEEE], Pages: 1-1
Epitaxial GeTe-Sb2Te3 Alloys Probed by Single Cycle THz Pulses of Coherent Synchrotron Radiation
Fourier Transform Spectroscopy [Optical Society of America], Pages: FW3D. 3
JSAP-OSA Joint Symposia [Optical Society of America], Pages: 17p_C4_6
JSAP-OSA Joint Symposia [Optical Society of America], Pages: 17p_C4_5
JSAP Annual Meetings Extended Abstracts The 74th JSAP Autumn Meeting 2013 [The Japan Society of Applied Physics], Pages: 264-264
JSAP Annual Meetings Extended Abstracts The 74th JSAP Autumn Meeting 2013 [The Japan Society of Applied Physics], Pages: 254-254
Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI [International Society for Optics and Photonics], Volume: 8624 Pages: 862416
2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves [IEEE], Pages: 1-3
Gallium Nitride Materials and Devices VII [International Society for Optics and Photonics], Volume: 8262 Pages: 82620P
Cathodoluminescence spectroscopy on selectively grown GaN nanowires
Gallium Nitride Materials and Devices VI [International Society for Optics and Photonics], Volume: 7939 Pages: 793903
III–V semiconductor nanowires: Nitrides (N-based; III-N)
Semiconductor Nanowires [Woodhead Publishing], Pages: 125-145
GaN and InN nanowires: growth and optoelectronic properties
Trends in Nanophysics [Springer, Berlin, Heidelberg], Pages: 73-96