L Mariucci, G Giusi, M Rapisarda, A La Magna, S Calvi, A Valletta, G Fortunato

Electrical instability in short channel organic thin-film transistors induced by lucky-polaron mechanism

Organic Electronics [North-Holland], Volume: 98 Pages: 106279

Antonio Valletta, Valentina Mussi, Matteo Rapisarda, Andrea Lucibello, Marco Natali, Marco Peroni, Claudio Lanzieri, Guglielmo Fortunato, Luigi Mariucci

Hybrid Electrothermal Simulations of GaN HEMT Devices Based on Self-Heating Free Virtual Electrical Characteristics

IEEE Transactions on Electron Devices [IEEE], Volume: 68 Issue: 8 Pages: 3740-3747

Antonio Valletta, Sabrina Calvi, Matteo Rapisarda, Guglielmo Fortunato, Andrea Fabbri, Paolo Branchini, Luigi Mariucci

(Invited) Non Quasi Static Modeling of Printed Organic Thin Film Transistors in Large Signal and Small Signal Operation

239th ECS Meeting with the 18th International Meeting on Chemical Sensors (IMCS)(May 30-June3, 2021) [ECS],

Emanuela Saracino, Luca Maiolo, Davide Polese, M Semprini, Ana Isabel Borrachero‐Conejo, Jacopo Gasparetto, Stefano Murtagh, Margherita Sola, Lorenzo Tomasi, Francesco Valle, Luca Pazzini, Francesco Formaggio, Michela Chiappalone, Saber Hussain, Marco Caprini, Michele Muccini, Luigi Ambrosio, Guglielmo Fortunato, Roberto Zamboni, Annalisa Convertino, Valentina Benfenati

A Glial‐Silicon Nanowire Electrode Junction Enabling Differentiation and Noninvasive Recording of Slow Oscillations from Primary Astrocytes

Advanced biosystems [], Volume: 4 Issue: 4 Pages: 1900264

Emanuela Saracino, Luca Maiolo, Davide Polese, M Semprini, Ana Isabel Borrachero‐Conejo, Jacopo Gasparetto, Stefano Murtagh, Margherita Sola, Lorenzo Tomasi, Francesco Valle, Luca Pazzini, Francesco Formaggio, Michela Chiappalone, Saber Hussain, Marco Caprini, Michele Muccini, Luigi Ambrosio, Guglielmo Fortunato, Roberto Zamboni, Annalisa Convertino, Valentina Benfenati

Extracellular Recording Systems: A Glial‐Silicon Nanowire Electrode Junction Enabling Differentiation and Noninvasive Recording of Slow Oscillations from Primary Astrocytes …

Advanced Biosystems [], Volume: 4 Issue: 4 Pages: 2070044

Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials [Multidisciplinary Digital Publishing Institute], Volume: 12 Issue: 20 Pages: 3362

Luca Pazzini, Davide Polese, Julia F Weinert, Luca Maiolo, Francesco Maita, Marco Marrani, Alessandro Pecora, Maria V Sanchez-Vives, Guglielmo Fortunato

An ultra-compact integrated system for brain activity recording and stimulation validated over cortical slow oscillations in vivo and in vitro

Scientific reports [Nature Publishing Group], Volume: 8 Issue: 1 Pages: 1-13

S Calvi, F Maita, M Rapisarda, G Fortunato, A Valletta, V Preziosi, A Cassinese, L Mariucci

Gravure printed organic thin film transistors: Study on the ink printability improvement

Organic Electronics [North-Holland], Volume: 61 Pages: 104-112

Annalisa Convertino, Valentina Mussi, Luca Maiolo, Mario Ledda, Maria Grazia Lolli, Fabio Antonio Bovino, Guglielmo Fortunato, Massimiliano Rocchia, Antonella Lisi

Array of disordered silicon nanowires coated by a gold film for combined NIR photothermal treatment of cancer cells and Raman monitoring of the process evolution

Nanotechnology [IOP Publishing], Volume: 29 Issue: 41 Pages: 415102

L Pazzini, D Polese, L Maiolo, E Castagnola, E Maggiolini, E Zucchini, M Marrani, G Fortunato, L Fadiga, D Ricci

Brain stimulation and recording with ultra-flexible PEDOT-CNT-coated micro-ECoG electrode arrays

Brain Stimulation: Basic, Translational, and Clinical Research in Neuromodulation [Elsevier], Volume: 10 Issue: 2 Pages: 478

D Polese, A Mattoccia, F Giorgi, L Pazzini, L Di Giamberardino, G Fortunato, PG Medaglia

A phenomenological investigation on Chlorine intercalated Layered Double Hydroxides used as room temperature gas sensors

Journal of Alloys and Compounds [Elsevier], Volume: 692 Pages: 915-922

R Milazzo, G Impellizzeri, D Piccinotti, D De Salvador, A Portavoce, A La Magna, G Fortunato, Dominique Mangelinck, V Privitera, A Carnera, E Napolitani

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Applied Physics Letters [AIP Publishing LLC], Volume: 110 Issue: 1 Pages: 011905

T Kalliovaara, Jonatan Slotte, Ilja Makkonen, J Kujala, Filip Tuomisto, R Milazzo, G Impellizzeri, G Fortunato, E Napolitani

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 18 Pages: 182107

Gino Giusi, Graziella Scandurra, Sabrina Calvi, Guglielmo Fortunato, Matteo Rapisarda, Luigi Mariucci, Carmine Ciofi

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors

IEEE Electron Device Letters [IEEE], Volume: 37 Issue: 12 Pages: 1625-1627

Luca Maiolo, Davide Polese, Alessandro Pecora, Guglielmo Fortunato, Yosi Shacham‐Diamand, Annalisa Convertino

Highly disordered array of silicon nanowires: an effective and scalable approach for performing and flexible electrochemical biosensors

Advanced healthcare materials [], Volume: 5 Issue: 5 Pages: 575-583

Luca Maiolo, Francesco Maita, Alessandro Pecora, Antonio Minotti, Guglielmo Fortunato, Emanuele Smecca, Alessandra Alberti

A comparison among low temperature piezoelectric flexible sensors based on polysilicon TFTs for advanced tactile sensing on plastic

Journal of Display Technology [IEEE], Volume: 12 Issue: 3 Pages: 209-213

R Milazzo, G Impellizzeri, M Cuscunà, D De Salvador, M Mastromatteo, A La Magna, G Fortunato, F Priolo, V Privitera, A Carnera, E Napolitani

Oxygen behavior in germanium during melting laser thermal annealing

Materials Science in Semiconductor Processing [Pergamon], Volume: 42 Pages: 196-199

G Giusi, O Giordano, G Scandurra, S Calvi, G Fortunato, M Rapisarda, L Mariucci, C Ciofi

Correlated mobility fluctuations and contact effects in p-Type organic thin-film transistors

IEEE Transactions on Electron Devices [IEEE], Volume: 63 Issue: 3 Pages: 1239-1245

R Milazzo, G Impellizzeri, D Piccinotti, A La Magna, G Fortunato, D De Salvador, A Carnera, A Portavoce, Dominique Mangelinck, V Privitera, E Napolitani

Impurity and defect interactions during laser thermal annealing in Ge

Journal of Applied Physics [AIP Publishing LLC], Volume: 119 Issue: 4 Pages: 045702

D De Salvador, A Carnera, E Napolitani, G Impellizzeri, V Privitera, D Piccinotti, A La Magna, G Fortunato, A Portavoce, D Mangelinck

Impurity and defect interactions during laser thermal annealing in Ge

Journal of Applied Physics [], Volume: 119 Issue: 4

Matteo Rapisarda, Sabrina Calvi, Antonio Valletta, Luigi Fortunato, Guglielmo and Mariucci

The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs

JOURNAL OF DISPLAY TECHNOLOGY [], Volume: 12 Issue: 3 Pages: 252-256

Emanuele Smecca, Francesco Maita, Giovanna Pellegrino, Vincenzo Vinciguerra, Luigi La Magna, Salvo Mirabella, Luca Maiolo, Guglielmo Fortunato, Guglielmo G Condorelli, Alessandra Alberti

AlN texturing and piezoelectricity on flexible substrates for sensor applications

Applied Physics Letters [AIP Publishing LLC], Volume: 106 Issue: 23 Pages: 232903

Luca Pazzini, Davide Polese, Marco Marrani, Francesco Maita, Nuria Tort, Julia F Weinert, Mattia D’Andola, Luca Maiolo, Alessandro Pecora, Guglielmo Fortunato, Maria V Sanchez-Vives

A compact integrated system for neural signal acquisition and stimulation

B DEBATE-A Dialogue with the Cerebral Cortex: Cortical Function and Interfacing (Workshop), Barcelona, Spain [], Pages: 29-30

Gino Giusi, Orazio Giordano, Graziella Scandurra, Sabrina Calvi, Guglielmo Fortunato, Matteo Rapisarda, Luigi Mariucci, Carmine Ciofi

Evidence of correlated mobility fluctuations in p-type organic thin-film transistors

IEEE Electron Device Letters [IEEE], Volume: 36 Issue: 4 Pages: 390-392

Francesco Maita, Luca Maiolo, Antonio Minotti, Alessandro Pecora, Davide Ricci, Giorgio Metta, Graziella Scandurra, Gino Giusi, Carmine Ciofi, Guglielmo Fortunato

Ultra-flexible Tactile Piezoelectric Sensor Based On Low-temperature Polycrystalline Silicon Thin Film Transistor Technology

IEEE Sensors Journal [IEEE], Volume: 15 Issue: 7 Pages: 3819-3826

D Polese, A Mattoccia, F Giorgi, L Pazzini, A Ferrone, L Di Giamberardino, L Maiolo, A Pecora, A Convertino, G Fortunato, PG Medaglia

Layered double hydroxides intercalated with chlorine used as low temperature gas sensors

Procedia engineering [Elsevier], Volume: 120 Pages: 1175-1178

Antonio Valletta, Matteo Rapisarda, Sabrina Calvi, Guglielmo Fortunato, Stephanie Jacob, Vincent Fischer, Mohammed Benwadih, Jacqueline Bablet, Isabelle Chartier, Romain Coppard, Luigi Mariucci

Modeling of Capacitance Characteristics of Printed p-Type Organic Thin-Film Transistors

IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 12 Pages: 4120-4127

A Valletta, G Fortunato, L Mariucci, P Barquinha, R Martins, E Fortunato

Contact effects in amorphous InGaZnO thin film transistors

Journal of Display Technology [IEEE], Volume: 10 Issue: 11 Pages: 956-961

L Maiolo, S Mirabella, F Maita, A Alberti, A Minotti, V Strano, A Pecora, Y Shacham-Diamand, G Fortunato

Flexible pH sensors based on polysilicon thin film transistors and ZnO nanowalls

Applied physics letters [AIP Publishing LLC], Volume: 105 Issue: 9 Pages: 093501

Guglielmo Fortunato, Luca Maiolo, Francesco Maita, Antonio Minotti, Salvo Mirabella, Vicky Strano, Giorgio Metta, Davide Ricci, Alessandro Pecora

Flexible Sensors Based on Low-Temperature Polycrystalline Silicon Thin Film Transistor Technology

ECS Meeting Abstracts [IOP Publishing], Issue: 47 Pages: 1931

Luigi Mariucci, Matteo Rapisarda, Antonio Valletta, Sabrina Calvi, Mohammed Benwadih, Romain Coppard, Guglielmo Fortunato

Contact Effects in Organic Thin Film Transistors with Different Device Structures

ECS Transactions [IOP Publishing], Volume: 64 Issue: 10 Pages: 131

Guglielmo Fortunato, Luca Maiolo, Francesco Maita, Antonio Minotti, Salvo Mirabella, Vicky Strano, Giorgio Metta, Davide Ricci, Alessandro Pecora

Flexible Sensors Based on Low-Temperature Polycrystalline Silicon Thin Film Transistor Technology

ECS Transactions [IOP Publishing], Volume: 64 Issue: 10 Pages: 165

Elisa Castagnola, Luca Maiolo, Emma Maggiolini, Antonio Minotti, Marco Marrani, Francesco Maita, Alessandro Pecora, Gian Nicola Angotzi, Alberto Ansaldo, Massimiliano Boffini, Luciano Fadiga, Guglielmo Fortunato, Davide Ricci

PEDOT-CNT-coated low-impedance, ultra-flexible, and brain-conformable micro-ECoG arrays

IEEE Transactions on Neural Systems and Rehabilitation Engineering [IEEE], Volume: 23 Issue: 3 Pages: 342-350

R Milazzo, E Napolitani, G Impellizzeri, G Fisicaro, S Boninelli, M Cuscunà, D De Salvador, M Mastromatteo, M Italia, A La Magna, G Fortunato, F Priolo, V Privitera, A Carnera

N-type doping of Ge by As implantation and excimer laser annealing

Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 5 Pages: 053501

G Impellizzeri, E Napolitani, R Milazzo, S Boninelli, M Cuscunà, G Fisicaro, A La Magna, G Fortunato, F Priolo, V Privitera

Role of oxygen on the electrical activation of B in Ge by excimer laser annealing

physica status solidi (a) [], Volume: 211 Issue: 1 Pages: 122-125

A Valletta, L Mariucci, A Pecora, L Maiolo, SD Brotherton, G Fortunato

Analysis of kink effect and short channel effects in fully self-aligned gate overlapped lightly doped drain polysilicon TFTs

Journal of display technology [IEEE], Volume: 9 Issue: 9 Pages: 764-769

A Valletta, L Mariucci, M Rapisarda, G Fortunato

Principle of operation and modeling of source-gated transistors

Journal of Applied Physics [American Institute of Physics], Volume: 114 Issue: 6 Pages: 064501

Guglielmo Fortunato, Matteo Rapisarda, Antonio Valletta, Luigi Mariucci

Contact effects in organic and inorganic thin film transistors

ECS Transactions [IOP Publishing], Volume: 54 Issue: 1 Pages: 171

Luca Maiolo, Alessandro Pecora, Francesco Maita, Antonio Minotti, Emiliano Zampetti, Simone Pantalei, Antonella Macagnano, Andrea Bearzotti, Davide Ricci, Guglielmo Fortunato

Flexible sensing systems based on polysilicon thin film transistors technology

Sensors and Actuators B: Chemical [Elsevier], Volume: 179 Pages: 114-124

G Impellizzeri, E Napolitani, S Boninelli, G Fisicaro, M Cuscunà, R Milazzo, A La Magna, G Fortunato, F Priolo, V Privitera

B-doping in Ge by excimer laser annealing

Journal of Applied Physics [American Institute of Physics], Volume: 113 Issue: 11 Pages: 113505

Elena Bruno, Giorgia G Scapellato, Enrico Napolitani, Salvatore Mirabella, Simona Boninelli, Antonino La Magna, Massimo Mastromatteo, Davide De Salvador, Guglielmo Fortunato, Vittorio Privitera, Francesco Priolo

Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications

ECS Transactions [IOP Publishing], Volume: 50 Issue: 5 Pages: 89

L Mariucci, M Rapisarda, A Valletta, S Jacob, M Benwadih, G Fortunato

Current spreading effects in fully printed p-channel organic thin film transistors with Schottky source–drain contacts

Organic Electronics [North-Holland], Volume: 14 Pages: 86-93

P Foglietti, G Fortunato, L Mariucci, C Reita

FILM TRANSISTORS WITH VERY THIN PECVD a-SiO2 GATE

Crucial Issues in Semiconductor Materials and Processing Technologies [Springer Science & Business Media], Volume: 222 Pages: 27

M Rapisarda, G Fortunato, A Valletta, S Jacob, M Benwadih, R Coppard, I Chartier, L Mariucci

Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 23 Pages: 233304

E Bruno, GG Scapellato, A La Magna, M Cuscunà, E Napolitani, S Boninelli, F Priolo, G Fortunato, V Privitera

Anomalous transport of Sb in laser irradiated Ge

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 17 Pages: 172110

M Rapisarda, A Valletta, A Daami, S Jacob, M Benwadih, R Coppard, G Fortunato, L Mariucci

Analysis of contact effects in fully printed p-channel organic thin film transistors

Organic Electronics [North-Holland], Volume: 13 Issue: 10 Pages: 2017-2027

Massimo Cuscunà, Annalisa Convertino, Emiliano Zampetti, Antonella Macagnano, Alessandro Pecora, Guglielmo Fortunato, Laura Felisari, Giuseppe Nicotra, Corrado Spinella, Faustino Martelli

On-chip fabrication of ultrasensitive NO2 sensors based on silicon nanowires

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 103101

G Fortunato, L Maiolo, A Pecora, F Maita, A Minotti, D Ricci, G Metta

Flexible tactile sensors based on polysilicon TFT technology for robotics application

Istituto Italiano di tecnologia, italia, IMID DIGEST [],

Antonio Valletta, Luca Maiolo, Luigi Mariucci, Alessandro Pecora, Matteo Rapisarda, Guglielmo Fortunato, Stan D Brotherton

Reduction of short channel effects and hot carrier induced instability in fully self-aligned gate overlapped lightly doped drain polysilicon TFTs

Journal of display Technology [IEEE], Volume: 8 Issue: 1 Pages: 18-22

L Mariucci, P Gaucci, A Valletta, A Pecora, L Maiolo, M Cuscuna, G Fortunato

Edge effects in self-heating-related instabilities in p-channel polycrystalline-silicon thin-film transistors

IEEE electron device letters [IEEE], Volume: 32 Issue: 12 Pages: 1707-1709

Paola Castrucci, Silvano Del Gobbo, Luca Camilli, Manuela Scarselli, S Casciardi, F Tombolini, A Convertino, G Fortunato, Maurizio De Crescenzi

Photovoltaic response of carbon nanotube-silicon heterojunctions: Effect of nanotube film thickness and number of walls

Journal of nanoscience and nanotechnology [American Scientific Publishers], Volume: 11 Issue: 10 Pages: 9202-9207

A Valletta, P Gaucci, L Mariucci, A Pecora, L Maiolo, G Fortunato

Downscaling effects on self-heating related instabilities in p-channel polycrystalline silicon thin film transistors

Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 5 Pages: 053503

E Zampetti, L Maiolo, A Pecora, F Maita, S Pantalei, A Minotti, A Valletta, M Cuscunà, A Macagnano, G Fortunato, A Bearzotti

Flexible sensorial system based on capacitive chemical sensors integrated with readout circuits fully fabricated on ultra thin substrate

Sensors and Actuators B: Chemical [Elsevier], Volume: 155 Issue: 2 Pages: 768-774

Guglielmo Fortunato, Massimo Cuscunà, Luca Maiolo, Luigi Mariucci, Matteo Rapisarda, Alessandro Pecora, Antonio Valletta, Stan D Brotherton

Short channel effects and drain field relief architectures in polysilicon TFTs

ECS Transactions [IOP Publishing], Volume: 37 Issue: 1 Pages: 3

G Fisicaro, M Italia, V Privitera, G Piccitto, K Huet, J Venturini, A La Magna

Solid phase phosphorous activation in implanted silicon by excimer laser irradiation

Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 11 Pages: 113513

Silvano Del Gobbo, P Castrucci, Ma Scarselli, L Camilli, M De Crescenzi, L Mariucci, A Valletta, A Minotti, G Fortunato

Carbon nanotube semitransparent electrodes for amorphous silicon based photovoltaic devices

Applied Physics Letters [American Institute of Physics], Volume: 98 Issue: 18 Pages: 183113

D Simeone, M Rapisarda, G Fortunato, A Valletta, L Mariucci

Influence of structural properties on environmental stability of pentacene thin film transistors

Organic Electronics [North-Holland], Volume: 12 Issue: 3 Pages: 447-452

M Rapisarda, D Simeone, G Fortunato, A Valletta, L Mariucci

Pentacene thin film transistors with (polytetrafluoroethylene) PTFE-like encapsulation layer

Organic Electronics [North-Holland], Volume: 12 Issue: 1 Pages: 119-124

A Alberti, A La Magna, M Cuscunà, G Fortunato, C Spinella, V Privitera

Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing

Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 12 Pages: 123511

P Gaucci, A Valletta, L Mariucci, A Pecora, L Maiolo, G Fortunato

Analysis of self-heating-related instability in self-aligned p-channel polycrystalline-silicon thin-film transistors

IEEE Electron Device Letters [IEEE], Volume: 31 Issue: 8 Pages: 830-832

A Alberti, A La Magna, M Cuscunà, G Fortunato, V Privitera

Simultaneous nickel silicidation and silicon crystallization induced by excimer laser annealing on plastic substrate

Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 14 Pages: 142113

A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato

Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects

Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 7 Pages: 074505

L Maiolo, M Cuscuna, L Mariucci, A Minotti, A Pecora, D Simeone, A Valletta, G Fortunato

Analysis of self-heating related instability in n-channel polysilicon thin film transistors fabricated on polyimide

Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6371-6374

L Mariucci, P Gaucci, A Valletta, M Cuscunà, L Maiolo, A Pecora, G Fortunato

Negative bias–temperature stress in non-self-aligned p-channel polysilicon TFTs

Thin solid films [Elsevier], Volume: 517 Issue: 23 Pages: 6379-6382

D Simeone, S Cipolloni, L Mariucci, M Rapisarda, A Minotti, A Pecora, M Cuscuna, L Maiolo, G Fortunato

Pentacene TFTs with parylene passivation layer

Thin Solid Films [Elsevier], Volume: 517 Issue: 23 Pages: 6283-6286

A Valletta, P Gaucci, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato, SD Brotherton

Role of gate oxide thickness in controlling short channel effects in polycrystalline silicon thin film transistors

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 3 Pages: 033507

G Fortunato, M Cuscuna, P Gaucci, L Maiolo, L Mariucci, A Pecora, A Valletta, F Templier

Self-heating effects in p-channel polysilicon TFTs fabricated on different substrates

Journal of the Korean Physical Society [The Korean Physical Society], Volume: 54 Issue: 1 Pages: 455-462

A Valletta, M Rapisarda, L Mariucci, A Pecora, G Fortunato, C Caligiore, E Fontana, F Tramontana, S Leonardi

Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors

Thin Solid Films [], Volume: 23 Issue: 517 Pages: 6353-6357

L Mariucci, S Cipolloni, D Simeone, M Cuscuna, L Maiolo, A Minotti, A Pecora, A Valletta, G Fortunato

Water-Related Instabilities in Pentacene Thin-Film Transistors

Journal of the Korean Physical Society [Korean Physical Society], Volume: 54 Issue: 1 Pages: 505-509

G Fortunato, M Cuscunà, L Maiolo, F Maita, L Mariucci, A Minotti, A Pecora, D Simeone, A Valletta, A Bearzotti, A Macagnano, S Pantalei, E Zampetti

Flexible electronics based on polysilicon thin film transistor

한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 258-261

A Valletta, P Gaucci, L Mariucci, G Fortunato, F Templier

“Hump” characteristics and edge effects in polysilicon thin film transistors

Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 12 Pages: 124511

P Gaucci, A Valletta, L Mariucci, A Pecora, M Cuscunà, L Maiolo, G Fortunato

Role of field enhanced mechanisms and impact ionization on the threshold voltage of short channel polycrystalline silicon thin film transistors

Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 19 Pages: 193512

V Privitera, S Scalese, A La Magna, A Pecora, M Cuscunà, L Maiolo, A Minotti, D Simeone, L Mariucci, G Fortunato, L Caristia, F Mangano, S Di Marco, M Camalleri, S Ravesi, S Coffa, MG Grimaldi, R De Bastiani, P Badalà, S Bagiante

Low-temperature annealing combined with laser crystallization for polycrystalline silicon TFTs on polymeric substrate

Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 10 Pages: H764

L Mariucci, D Simeone, S Cipolloni, L Maiolo, A Pecora, G Fortunato, S Brotherton

Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer

Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 412-416

M Rapisarda, L Mariucci, A Valletta, A Pecora, G Fortunato, C Caligiore, E Fontana, S Leonardi, F Tramontana

Electrical instability in self-aligned p-channel polysilicon TFTs related to damaged regions present at the gate edges

Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 406-411

A Pecora, L Maiolo, M Cuscunà, D Simeone, A Minotti, L Mariucci, G Fortunato

Low-temperature polysilicon thin film transistors on polyimide substrates for electronics on plastic

Solid-state electronics [Pergamon], Volume: 52 Issue: 3 Pages: 348-352

G Fortunato, A Valletta, P Gaucci, L Mariucci, M Cuscuna, L Maiolo, A Pecora

Drain induced barrier lowering and impact ionization effects in short channel polysilicon TFTs

한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 907-910

Antonio Valletta, Alessandra Bonfiglietti, Matteo Rapisarda, Alessandro Pecora, Luigi Mariucci, Guglielmo Fortunato, Stan D Brotherton

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

ECS Transactions [IOP Publishing], Volume: 8 Issue: 1 Pages: 211

A Valletta, P Gaucci, L Mariucci, G Fortunato

Modelling velocity saturation and kink effects in p-channel polysilicon thin-film transistors

thin solid films [Elsevier], Volume: 515 Issue: 19 Pages: 7417-7421

P Gaucci, L Mariucci, A Valletta, A Pecora, G Fortunato, F Templier

Electrical stability in self-aligned p-channel polysilicon thin film transistors

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7571-7575

A Bonfiglietti, M Cuscunà, M Rapisarda, A Pecora, L Mariucci, G Fortunato, C Caligiore, E Fontana, S Leonardi, F Tramontana

Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression

Thin solid films [Elsevier], Volume: 515 Issue: 19 Pages: 7433-7436

S Cipolloni, L Mariucci, A Valletta, D Simeone, F De Angelis, G Fortunato

Aging effects and electrical stability in pentacene thin film transistors

Thin Solid Films [Elsevier], Volume: 515 Issue: 19 Pages: 7546-7550

L Maiolo, A Pecora, M Cuscunà, G Fortunato

Thermal annealing effects on the interface state density of metal-oxide-semiconductor capacitors with electron cyclotron resonance plasma enhanced chemical vapor deposition Silicon dioxide

Thin solid films [Elsevier], Volume: 515 Issue: 19 Pages: 7590-7593

A La Magna, V Privitera, Guglielmo Fortunato, Massimo Cuscunà, BG Svensson, E Monakhov, K Kuitunen, J Slotte, Filip Tuomisto

Vacancy generation in liquid phase epitaxy of Si

Physical Review B [American Physical Society], Volume: 75 Issue: 23 Pages: 235201

A Valletta, A Bonfiglietti, M Rapisarda, L Mariucci, G Fortunato, SD Brotherton

Grain boundary evaluation in sequentially laterally solidified polycrystalline-silicon devices

Journal of applied physics [American Institute of Physics], Volume: 101 Issue: 9 Pages: 094502

G Lulli, M Bianconi, M Ferri, G Fortunato, L Mariucci

RBS-channeling analysis of ion-irradiation effects in heavily-doped Si: As

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 257 Issue: 1-2 Pages: 253-256

Luigi Mariucci, Paolo Gaucci, Antonio Valletta, Francois Templier, Guglielmo Fortunato

TFT Characterization & Reliability-Hot Carrier Effects in p-Channel Polycrystalline Silicon Thin Film Transistors Fabricated on Flexible Substrates

Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes [Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-], Volume: 46 Issue: 3 Pages: 1299-1302

G Fortunato, P Gaucci, L Mariucci, A Pecora, A Valletta

Electrical instabilities in p-channel polysilicon TFTs: role of hot carrier and self-heating effects

한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 1065-1070

G Fortunato, L Mariucci, M Cuscunà, V Privitera, A La Magna, C Spinella, A Magri, M Camalleri, D Salinas, F Simon, B Svensson, E Monakhov

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 25 Pages: 253502

L Romano, AM Piro, V Privitera, E Rimini, G Fortunato, BG Svensson, M Foad, MG Grimaldi

Mechanism of de-activation and clustering of B in Si at extremely high concentration

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 253 Issue: 1-2 Pages: 50-54

L Mariucci, A Valletta, P Gaucci, G Fortunato, F Templier

Hot-carrier effects in p-channel polycrystalline silicon thin film transistors

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 18 Pages: 183518

M Cuscunà, L Mariucci, G Fortunato, A Bonfiglietti, A Pecora, A Valletta

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 12 Pages: 123506

Antonio Valletta, Alessandro Moroni, Luigi Mariucci, Alessandra Bonfiglietti, Guglielmo Fortunato

Self-heating effects in polycrystalline silicon thin film transistors

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 9 Pages: 093509

F De Angelis, L Mariucci, S Cipolloni, G Fortunato

Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer

Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9-20 Pages: 1765-1768

M Cuscunà, G Stracci, A Bonfiglietti, A Di Gaspare, L Maiolo, A Pecora, L Mariucci, G Fortunato

Annealing temperature effects on the electrical characteristics of p-channel polysilicon thin film transistors

Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9-20 Pages: 1723-1727

A Pecora, L Maiolo, G Fortunato, C Caligiore

A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVD

Journal of non-crystalline solids [North-Holland], Volume: 352 Issue: 9-20 Pages: 1430-1433

A Valletta, P Gaucci, L Mariucci, G Fortunato

Modelling velocity saturation effects in polysilicon thin-film transistors

Japanese journal of applied physics [IOP Publishing], Volume: 45 Issue: 5S Pages: 4374

G Fortunato, V Privitera, A La Magna, L Mariucci, M Cuscunà, BG Svensson, E Monakhov, M Camalleri, A Magrì, D Salinas, F Simon

Excimer Laser annealing for shallow junction formation in Si power MOS devices

Thin solid films [Elsevier], Volume: 504 Issue: 1-2 Pages: 2-6

F De Angelis, S Cipolloni, L Mariucci, G Fortunato

Aging effects in pentacene thin-film transistors: Analysis of the density of states modification

Applied physics letters [American Institute of Physics], Volume: 88 Issue: 19 Pages: 193508

T Toccoli, A Pallaoro, N Coppedè, S Iannotta, F De Angelis, L Mariucci, G Fortunato

Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

Applied physics letters [American Institute of Physics], Volume: 88 Issue: 13 Pages: 132106

L Maiolo, A Pecora, G Fortunato, ND Young

Low-temperature electron cyclotron resonance plasma-enhanced chemical-vapor deposition silicon dioxide as gate insulator for polycrystalline silicon thin-film transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 24 Issue: 2 Pages: 280-285

P Gaucci, A Valletta, L Mariucci, G Fortunato, SD Brotherton

Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

IEEE transactions on electron devices [IEEE], Volume: 53 Issue: 3 Pages: 573-577

A Bonfiglietti, A Valletta, M Rapisarda, L Mariucci, G Fortunato

Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped Lightly Doped Drain Polysilicon Thin-Film

Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes [Tokyo, Japan: Publication Board, Japanese Journal], Volume: 45 Issue: 5 Pages: 4384-4388

CD Breach, C Bunel, M Camalleri, D Canaperi, S Chakraborty, DSH Chan, HY Chan, L Chan, M Chan, YC Chan, N Chandani, S Chattopadhyay, BL Chen, Q Chen, ST Chen, TP Chen, XF Chen, XT Chen, Z Chen, L Cheng, YH Cheng, D Chevrie, HB Chew, YC Ee, F El Kamel, HJ Engelmann, BB Faizhal, LH Fen, HH Feng, Y Feng, V Filip, EA Fitzgerald, PD Foo, YL Foo, G Fortunato, T Fric, Z Gan, ZH Gan, D Gao, F Gao, W Gao, LM Gignac, CF Goh, IS Goh, MM Islam, MK Iyer, HM Jin, LJ Jin, F Jomni, YC Joo, JH Jun, JS Juneja, JY Jung, SB Jung, S Kaldor, S Kar, T Karabacak, ALAM Kemmeren, T Kheng Lee, GY Khoo, DG Kim, JW Kim, KS Kim, NH Kim, NS Kim, YS Kim, KY Lee, P Lee, PS Lee, RTP Lee, SB Lee, SJ Lee, TK Lee, WS Lee, C Li, CY Li, GY Li, H Li, MF Li, Q Li, R Li, S Li, WH Li, Z Li, EB Liao, SL Liew, B Lim, HS Lim, H Lin, J Lin, TT Lin, E Liniger

Durbin, SM, 136

Thin Solid Films [], Volume: 504 Pages: 446-447

G Fortunato, A Bonfiglietti, A Valletta, L Mariucci, M Rapisarda, SD Brotherton

Analysis of transport properties of SLS polysilicon TFTs

한국정보디스플레이학회: 학술대회논문집 [The Korean Infomation Display Society], Pages: 513-518

L Maiolo, A Pecora, G Fortunato, ND Young

Low-temperature ECR-PECVD silicon dioxide as gate insulator for polycrystalline silicon thin film transistors

Journal of Vacuum Science & Technology A [], Volume: 24 Pages: 280

A Valletta, P Gaucci, L Mariucci, G Fortunato

Active-Matrix Liquid-Crystal Displays-TFT Technology--Characterization-Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors

Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes [Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-], Volume: 45 Issue: 5 Pages: 4374-4377

G Fortunato, M Cuscuna, L Mariucci, A Bonfiglietti, A Pecora, A Valletta

Asymmetric fingered TFT structure: a new architecture for kink effect and off-current suppression and improved stability

Journal of the Korean Physical Society [], Volume: 48 Issue: 91 Pages: S64-S71

A Bonfiglietti, A Valletta, M Rapisarda, L Mariucci, G Fortunato

Active-Matrix Liquid-Crystal Displays-TFT Technology--Characterization-Effects of Fabrication Parameters on the Electrical Stability of Gate Overlapped Lightly Doped Drain Polysilicon Thin-Film

Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes [Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-], Volume: 45 Issue: 5 Pages: 4384-4388

A Valletta, L Mariucci, G Fortunato

Hot-carrier-induced degradation of LDD polysilicon TFTs

IEEE transactions on electron devices [IEEE], Volume: 53 Issue: 1 Pages: 43-50

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscuna, L Mariucci

Boron distribution in silicon after excimer laser annealing with multiple pulses

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 228-231

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, M Italia, V Privitera, G Fortunato, M Cuscuna, L Mariucci

Excimer laser annealing of B and BF 2 implanted Si

Materials Science and Engineering: B [Elsevier], Volume: 124 Pages: 232-234

R Thapliyal, P Schwaller, M Amberg, FJ Haug, G Fortunato, D Hegemann, HJ Hug, A Fischer

PZT thin film deposition on Si wafers and optical fibers prepared by reactive DC pulsed magnetron sputtering from a single metallic target

Surface and Coatings Technology [Elsevier], Volume: 200 Issue: 1-4 Pages: 1051-1056

A Di Gaspare, L Mariucci, A Pecora, G Fortunato

Stable p-channel polysilicon thin film transistors fabricated by laser doping technique

Thin solid films [Elsevier], Volume: 487 Issue: 1-2 Pages: 232-236

M Cuscunà, L Mariucci, G Fortunato, A Bonfiglietti, A Pecora, A Valletta

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

Thin solid films [Elsevier], Volume: 487 Issue: 1-2 Pages: 237-241

A Valletta, L Mariucci, A Bonfiglietti, G Fortunato, SD Brotherton

Channel doping effects in poly-Si thin film transistors

Thin solid films [Elsevier], Volume: 487 Issue: 1-2 Pages: 242-246

G Fortunato, A Valletta, P Gaucci, L Mariucci, SD Brotherton

Short channel effects in polysilicon thin film transistors

Thin Solid Films [Elsevier], Volume: 487 Issue: 1-2 Pages: 221-226

A Bonfiglietti, A Valletta, P Gaucci, L Mariucci, G Fortunato, SD Brotherton

Electrical characterization of directionally solidified polycrystalline silicon

Journal of applied physics [American Institute of Physics], Volume: 98 Issue: 3 Pages: 033702

F De Angelis, S Cipolloni, L Mariucci, G Fortunato

High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 20 Pages: 203505

A Valletta, L Mariucci, A Bonfiglietti, G Fortunato, SD Brotherton

Dopant and defect interactions in polycrystalline silicon thin-film transistors

Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 10 Pages: 104515

A Pecora, Luca Maiolo, A Bonfiglietti, M Cuscunà, F Mecarini, Luigi Mariucci, Guglielmo Fortunato, ND Young

Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing

Microelectronics Reliability [Pergamon], Volume: 45 Issue: 5-6 Pages: 879-882

Sean Whelan, Michael J Kelly, John Yan, Guglielmo Fortunato

Radiation damage annealing (thermal and laser) in Mg implanted GaN

physica status solidi (c) [WILEY‐VCH Verlag], Volume: 2 Issue: 7 Pages: 2472-2475

Antonino La Magna, Paola Alippi, Vittorio Privitera, Guglielmo Fortunato

Role of light scattering in excimer laser annealing of Si

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 16 Pages: 161905

EV Monakhov, BG Svensson, Margareta K Linnarsson, A La Magna, C Spinella, C Bongiorno, V Privitera, G Fortunato, L Mariucci

Enhanced boron diffusion in excimer laser preannealed Si

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 15 Pages: 151902

Giovanni Mannino, Vittorio Privitera, Antonino La Magna, Emanuele Rimini, Enrico Napolitani, Guglielmo Fortunato, Luigi Mariucci

Depth distribution of B implanted in Si after excimer laser irradiation

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 5 Pages: 051909